ノグチ　ユタカ   NOGUCHI Yutaka   野口　裕    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2021/05
形態種別	学術雑誌
査読	査読あり
標題	Investigating Bulk-to-Interface Doping Relaxation in Light-Emitting Electrochemical Cells via Displacement Current Measurements
執筆形態	共著(筆頭者以外)
掲載誌名	ACS Applied Electronic Materials
掲載区分	国外
出版社・発行元	ACS publications
巻・号・頁	3(5),pp.2355-2361
総ページ数	7
担当区分	最終著者,責任著者
著者・共著者	Hayato Iwakiri, Hotaka Watanabe, Yutaka Noguchi
概要	In the present work, this extended DCM method was employed for Super Yellow-based LECs with two typical active layer thicknesses of approximately 60 and 120 nm, and the relaxation processes of the resulting devices were investigated. In the thick-film device, the deterioration of the luminous efficiency was dominated by the optical processes of self-absorption and exciton–polaron quenching, whereas in the thin-film device, the deterioration was facilitated by the electronic process of carrier injection. The carrier balance factor was critical to the luminous efficiency of the thin-film device under reverse-bias operation, although this was not the case for the thick-film device. The results indicate that the ECD relaxation propagates from the bulk to the interface and confirm that the active layer thickness is a major factor in the maintenance of efficient carrier injection. The extended DCM method is a promising approach for analyzing the dynamic and complex properties of LECs.
DOI	10.1021/acsaelm.1c00237