ノグチ　ユタカ   NOGUCHI Yutaka   野口　裕    所属   明治大学  理工学部    職種   専任教授
言語種別	英語
発行・発表の年月	2025/01
形態種別	学術雑誌
査読	査読あり
標題	Degradation properties of organic light-emitting diodes with modified interface charge density via dipolar doping studied by displacement current measurement
執筆形態	共著(筆頭者以外)
掲載誌名	Advanced Electronic Materials
掲載区分	国外
出版社・発行元	Wiley-VCH
巻・号・頁	pp.2400788
総ページ数	9
担当区分	最終著者,責任著者
国際共著	国際共著
著者・共著者	Mihiro Takeda, Alexander Hofmann, Wolfgang Brütting, Yutaka Noguchi
概要	This work delves into the correlations of the interface charge accumulation and degradation properties of Alq3-based OLEDs. The interface accumulated charge density is modified by SOP induced in the HTL by means of dipolar doping. It is confirmed that NPB cation acts as an exciton quencher, but TCTA cation does not, depending on the spectral overlap of Alq3 emission and the absorption of the respective cations. On the other hand, the TCTA devices degrade much faster than the NPB devices. Moreover, the device lifetime is similar or even shorter for the doped devices despite less interface charge density. These results suggest that holes accumulated at the interface between the hole transport material and Alq3 due to SOP are not mainly involved in the degradation mechanism. Furthermore, it is found that the charge traps generated due to degradation do not act as exciton quenchers, suggesting that they rather act as nonradiative recombination centers.
DOI	10.1002/aelm.202400788