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NOGUCHI Yutaka
Department Undergraduate School , School of Science and Technology Position Professor |
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| Language | English |
| Publication Date | 2016/10 |
| Type | Academic Journal |
| Peer Review | Peer reviewed |
| Title | Observation of charge transport through CdSe/ZnS quantum dots in a single-electron transistor structure |
| Contribution Type | Co-authored (other than first author) |
| Journal | Journal of Applied Physics |
| Journal Type | Another Country |
| Publisher | AIP publishing |
| Volume, Issue, Page | 120(16),pp.164306-1-164306-6 |
| Authorship | Last author,Corresponding author |
| Author and coauthor | Masanori Kobo, Makoto Yamamoto, Hisao Ishii, Yutaka Noguchi |
| Details | We fabricated single-electron transistors (SETs) having CdSe/ZnS core-shell-type quantum dots (CdSe/ZnS-QDs) as a Coulomb island using a wet chemistry technique. The electron-transport characteristics through the CdSe/ZnS-QDs were examined in an SET structure at 13 K. Coulomb blockade behavior with typical gate voltage dependence was clearly observed. The estimated charge addition energies of a CdSe/ZnS-QD ranged from 70 to 280 meV. Moreover, additional structures, including negative differential conductance, appeared in the stability diagram in the source-drain bias region beyond 100 mV; these structures are specific to single-charge transport through the discrete energy levels in the Coulomb island. |
| DOI | 10.1063/1.4966175 |