NOGUCHI Yutaka
   Department   Undergraduate School  , School of Science and Technology
   Position   Professor
Language English
Publication Date 2021/05
Type Academic Journal
Peer Review Peer reviewed
Title Investigating Bulk-to-Interface Doping Relaxation in Light-Emitting Electrochemical Cells via Displacement Current Measurements
Contribution Type Co-authored (other than first author)
Journal ACS Applied Electronic Materials
Journal TypeAnother Country
Publisher ACS publications
Volume, Issue, Page 3(5),pp.2355-2361
Total page number 7
Authorship Last author,Corresponding author
Author and coauthor Hayato Iwakiri, Hotaka Watanabe, Yutaka Noguchi
Details In the present work, this extended DCM method was employed for Super Yellow-based LECs with two typical active layer thicknesses of approximately 60 and 120 nm, and the relaxation processes of the resulting devices were investigated. In the thick-film device, the deterioration of the luminous efficiency was dominated by the optical processes of self-absorption and exciton–polaron quenching, whereas in the thin-film device, the deterioration was facilitated by the electronic process of carrier injection. The carrier balance factor was critical to the luminous efficiency of the thin-film device under reverse-bias operation, although this was not the case for the thick-film device. The results indicate that the ECD relaxation propagates from the bulk to the interface and confirm that the active layer thickness is a major factor in the maintenance of efficient carrier injection. The extended DCM method is a promising approach for analyzing the dynamic and complex properties of LECs.
DOI 10.1021/acsaelm.1c00237