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Tsutsumi Toshiyuki
Department Undergraduate School , School of Science and Technology Position Professor |
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| Language | English |
| Publication Date | 2003/12 |
| Type | Academic Journal |
| Title | "Systematic Electrical Characteristics of Ideal Rectangular Cross Section Si-Fin Channel Double-Gate MOSFETs Fabricated by a Wet Process" |
| Contribution Type | Co-authored (other than first author) |
| Journal | IEEE Transactions on Nanotechnology,The IEEE Electron Devices Society |
| Volume, Issue, Page | Vol.2(No.4),pp.pp198-204 |
| Author and coauthor | Yongxun LIU, Kenichi ISHII, Toshiyuki TSUTSUMI, Meishoku MASAHARA, Toshihiro Sekigawa, Kunihiro Sakamoto, Hedenori TAKASHIMA, Hiromi Yamauchi, and Eiichi SUZUKI |