Tsutsumi Toshiyuki
   Department   Undergraduate School  , School of Science and Technology
   Position   Professor
Language English
Publication Date 2003/12
Type Academic Journal
Title "Systematic Electrical Characteristics of Ideal Rectangular Cross Section Si-Fin Channel Double-Gate MOSFETs Fabricated by a Wet Process"
Contribution Type Co-authored (other than first author)
Journal IEEE Transactions on Nanotechnology,The IEEE Electron Devices Society
Volume, Issue, Page Vol.2(No.4),pp.pp198-204
Author and coauthor Yongxun LIU, Kenichi ISHII, Toshiyuki TSUTSUMI, Meishoku MASAHARA, Toshihiro Sekigawa, Kunihiro Sakamoto, Hedenori TAKASHIMA, Hiromi Yamauchi, and Eiichi SUZUKI