Tsutsumi Toshiyuki
   Department   Undergraduate School  , School of Science and Technology
   Position   Professor
Language English
Publication Date 2003/07
Type Academic Journal
Title "Ideal Rectangular Cross-Section Si-Fin Channel Doble-Gate MOSFETs Fabricated Using Orientation-Dependent Wet Etching"
Contribution Type Co-authored (other than first author)
Journal IEEE Electron Devices Lette,The IEEE Electron Devices Society
Volume, Issue, Page Vol.24(No.7),pp.pp484-486
Author and coauthor Yongxun Liu, Kenichi Ishii, Toshiyuki Tsutsumi, Meishoku Masahara, and Eiichi Suzuki