Tsutsumi Toshiyuki
   Department   Undergraduate School  , School of Science and Technology
   Position   Professor
Language English
Publication Date 2003/06
Type International Conference
Title "Electrical Property of Ideal Rectangular Si-Fin Channel Double-Gate MOSFETs"
Contribution Type Co-authored (other than first author)
Journal Abstracts of 2003 Silicon Nanoelectronics Workshop,A Satellite Conference of the VLSI Symposium,The IEEE Electron Devices Society
Volume, Issue, Page pp.pp64-65
Author and coauthor Y.X.Liu, K.Ishii, T.Tsutsumi, M.Masahara, T.Sekigawa, K.Sakamoto, H.Takashima, and E.Suzuki