Tsutsumi Toshiyuki
Department Undergraduate School , School of Science and Technology Position Professor |
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Language | English |
Publication Date | 2003/06 |
Type | International Conference |
Title | "Electrical Property of Ideal Rectangular Si-Fin Channel Double-Gate MOSFETs" |
Contribution Type | Co-authored (other than first author) |
Journal | Abstracts of 2003 Silicon Nanoelectronics Workshop,A Satellite Conference of the VLSI Symposium,The IEEE Electron Devices Society |
Volume, Issue, Page | pp.pp64-65 |
Author and coauthor | Y.X.Liu, K.Ishii, T.Tsutsumi, M.Masahara, T.Sekigawa, K.Sakamoto, H.Takashima, and E.Suzuki |