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Tsutsumi Toshiyuki
Department Undergraduate School , School of Science and Technology Position Professor |
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| Language | English |
| Publication Date | 1999/06 |
| Type | Academic Journal |
| Title | An Experimental 40-nm Gate Length 4-nm-Thick SOI n-MOSFET(国際会議) |
| Contribution Type | Co-authored (first author) |
| Journal | The Japan Society of Applied Physics and The JapanThe IEEE Electron Device Society1999 Silicon Nanoelectronics Workshop Abstracts, Kyoto |
| Volume, Issue, Page | pp.72-73 |
| Author and coauthor | ◎Seigo Kanemaru* , Kenichi Ishii* , Tatsuro Maeda* , Toshiyuki Tsutsumi(助手) , Hiroshi Hiroshima* , Eiichi Suzuki* |