Tsutsumi Toshiyuki
   Department   Undergraduate School  , School of Science and Technology
   Position   Professor
Language English
Publication Date 1999/06
Type Academic Journal
Title An Experimental 40-nm Gate Length 4-nm-Thick SOI n-MOSFET(国際会議)
Contribution Type Co-authored (first author)
Journal The Japan Society of Applied Physics and The JapanThe IEEE Electron Device Society1999 Silicon Nanoelectronics Workshop Abstracts, Kyoto
Volume, Issue, Page pp.72-73
Author and coauthor ◎Seigo Kanemaru* , Kenichi Ishii* , Tatsuro Maeda* , Toshiyuki Tsutsumi(助手) , Hiroshi Hiroshima* , Eiichi Suzuki*