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Tsutsumi Toshiyuki
Department Undergraduate School , School of Science and Technology Position Professor |
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| Language | English |
| Publication Date | 1999/05 |
| Type | Academic Journal |
| Title | Highly Suppressed Threshold Voltage Roll-off Characteristics of the 4 nm-Thick SOI n-MOSFETs in the 40-135 nm Gate Length Regime(国際会議) |
| Contribution Type | Co-authored (first author) |
| Journal | The Electrochemical SocietyProceedings of the 9th International Symposium on SOI Technology and Devices, Seatle |
| Volume, Issue, Page | pp.260-265 |
| Author and coauthor | ◎Eiichi Suzuki* , Kenichi Ishii* , Seigo Kanemaru* , Tatsuro Maeda* , Toshiyuki Tsutsumi(助手) , Kiyoko Nagai* , Toshihiro Sekigawa* , Hiroshi Hiroshima* |