Tsutsumi Toshiyuki
   Department   Undergraduate School  , School of Science and Technology
   Position   Professor
Language English
Publication Date 1999/04
Type Academic Journal
Title Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs using Epitaxial Layer Transfer SOI Wafers
Contribution Type Co-authored (first author)
Journal The Japan Society of Applied Physics,Japanese Journal of Applied Physics
Volume, Issue, Page Vol.38 Part1 No.4B,pp.2492-2495
Author and coauthor ◎Kenichi Ishii* , Eiichi Suzuki* , Sigo Kanamaru* , Tatsuro Maeda* , Toshiyuki Tsutsumi(助手) , Kiyoko Nagai* , Toshiro Sekkigawa* , Hiroshi Hiroshima*