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YOKOGAWA RYO
Department Undergraduate School , School of Science and Technology Position Assistant Professor |
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| Language | English |
| Publication Date | 2020/11 |
| Type | Academic Journal |
| Peer Review | Peer reviewed |
| Title | Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor |
| Contribution Type | Co-authored (first author) |
| Journal | Japanese Journal of Applied Physics |
| Journal Type | Another Country |
| Volume, Issue, Page | 59,pp.115503-1-115503-6 |
| Author and coauthor | Ryo Yokogawa, Hiroto Kobayashi, Yohichiroh Numasawa, Atsushi Ogura, Shin-ichi Nishizawa, Takuya Saraya, Kazuo Ito, Toshihiko Takakura, Shinichi Suzuki, Munetoshi Fukui, Kiyoshi Takeuchi, Toshiro Hiramoto |