(Last updated : 2018-04-23 15:43:28)
  TAJIMA Michio
   Organization for the Strategic Coordination of Research and Intellectual Properties
   Professor (non-tenured)
■ Books and Papers
1. Paper Quantification of C in Si by photoluminescence at liquid N temperature after electron irradiation (Co-authored (first author)) 2017/03
2. Paper Recent Advances in Quantitative Impurity Analysis by Photoluminescence Technique: High Concentration of Dopant Impurities and Low Concentration of Carbon (Co-authored (first author)) 2016/11
3. Paper Origin of room-temperature photoluminescence around C-line in electron-irradiated Si and its applicability for quantification of carbon (Co-authored (first author)) 2018/02
4. Paper H. Kiuchi, M. Tajima, F. Higuchi, A. Ogura, N. Iida, S. Tachibana, I. Masada and E. Nishijima (Co-authored (other than first author)) 2017/07
5. Paper Photoluminescence Due to Early Stage of Oxygen Precipitates in Multicrystalline Si for Solar CellsFumito Higuchi, Michio Tajima and Atsushi Ogura (Co-authored (other than first author)) 2017/06
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■ Conference Presentations
1. 2018/04/11 Quantification of low-level carbon in Si by photoluminescence at liquid nitrogen temperature and higher after electron irradiation (10th International Workshop on Crystalline Silicon for Solar Cells (CSSC-10))
2. 2017/11/13 Determination of carbon concentration in phosphorus-doped n-type Czochralski-grown Si crystals by liquid-nitrogen-temperature photoluminescence after electron irradiation (27th International Photovoltaic Science and Engineering Conference (PVSEC-27))
3. 2017/10/11 Determination of Low Carbon Concentration in Czochralski-Grown Si for Solar Cells by Liquid-Nitrogen-Temperature Photoluminescence after Electron Irradiation (17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII))
4. 2017/10/11 Systematic Variation of Photoluminescence with Dopant Impurities in Highly Doped and Highly Compensated Si (17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVII))
5. 2013/09/15 Photoluminescence Analysis of Oxygen Precipitation around Small-Angle Grain Boundaries in Multicrystalline Silicon Wafers (15th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP-XV), Warsaw, Poland, September 15-19)
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■ Academic Qualifications
1. 1970/04~1975/03 The University of Tokyo Graduate School, Division of Engineering 〔Doctoral course〕 Completed
2. 1966/04~1970/03 The University of Tokyo Faculty of Engineering Graduated
■ Award History
1. 1994/12 Best Poster Award in IEEE First World Conference on Photovoltaic Energy Conversion