Faculty Database - Miura Noboru

Books and Papers

Conference Presentations

Academic Qualifications

Research Topics, Consignment Studies & KAKENHI Researches

Award History

Current Specialized Field

Patents

（Last updated : 2023-03-27 15:57:06）

Miura Noboru
Department Undergraduate School , School of Science and Technology

Position Associate Professor

■ Books and Papers

1.	2019/03	Article	Initial alignment control technique using on-chip groove arrays for liquid crystal hybrid sillicon optical phase shifters OPTICAL EXPRESS 27(6),pp.8756-8767 (Collaboration)
2.	2019	Article	Effects of amorphous Si on DC electroluminescenct devices Japanese Journal of Applied Physics 58,pp.SFBB03-1-SFBB03-5 (Collaboration)
3.	2019	Article	Electroluminescence from impact excitation and carrier injection process in single device Japanese Journal of Applied Physics 58,pp.SFBB02-1-SFBB02-5 (Collaboration)
4.	2017/01	Article	Advantage of LED as Lighting Source for Plant Factory Japanese Journal of Optics pp.9-13 (Single)
5.	2016/11	Article	In-plane switching mode-based liquid crystal hybrid Si wired Mach-Zehnder optical switch Japanese Journal of Applied Physics 55(11),pp.118003-1-118003-3 (Collaboration)
6.	2016/03	Article	Vertically Curved Si Waveguide Coupler with Low Loss and Flat Wavelength Window Journal of Lightwave Technology 34(7),pp.1567-1571 (Collaboration)
7.	2015/10	Article	Vertical silicon waveguide coupler bent by ion implatation OPTICAL EXPRESS 23(23),pp.29449 (Collaboration)
8.	2012/03	Article	Nonlinear Electrical Properties of Thin Films of a Light-Emitting Perovskite-Type Oxide Pr_0.002(Ca_0.6Sr_0.4)_0.997TiO₃ Procedia Engineering 36,pp.388-395 (Collaboration)
9.	2011/04	Article	Highly transparent and flexible field emission devices based on single-walled carbon nanotube films Chemical Communications 47(17),pp.4980-4982 (Collaboration)
10.	2010/06	Article	Perceptibility of enviromental sounds by earphone wearers listening to pop and rock music Acoust. Sci. & Tech. 31(6),pp.387-393 (Collaboration)
11.	2010/01	Article	Effects of Fluoride Dopants in the Starting Materials for BaAl2S4:Eu Thin-Film Phosphors Japanese Journal of Applied Physics 49(1),pp.012401-1 - 012401-5 (Collaboration)
12.	2009/07	Article	Inorganic Electroluminescent Display Expected Materials for the Future pp.36-41 (Single)
13.	2009/04	Article	Effect of Electrical Properties of Platinum Palladium Oxide ThinFilms on the Optical Properties Journal of Vacuum Science of Japan pp.53-56 (Collaboration)
14.	2009/04	Article	Preparation and Evaluation of WO3-Bi2O3 Composite Thin Films Journal of Vacuum Society of Japan pp.49-52 (Collaboration)
15.	2009	Article	Low-Driving-Voltage Electroluminescence in Perovskite Films Advanced Materials 21(36),pp.3699-3702 (Collaboration)
16.	2008/09	Article	Electrochromism and Electronic Structure of Nitrogen Doped Tungsten Oxide Thin Films Prepared by RF Reactive Sputtering Japanese Journal of Applied Physics 47(9),pp.7230-7235 (Collaboration)
17.	2008/03	Article	Preparration and Evaluation of Nitrogen Doped Tungsten Oxide Thin Films J.Vac.Soc.Jpn pp.77-79 (Collaboration)
18.	2007/05	Article	Flux Effects on BaAl2S4:Eu,F Blue Phosphors Society for Information Display・SID 2007 International Symposium Digest of Technical Papers XXXVIII,pp.523-525 (Collaboration)
19.	2007/03	Article	Luminescence Properties of Multinary-compound Phosphors for Inorganic Electroluminescence OYO Buturi pp.252-257 (Single)
20.	2007/03	Article	Optical Properties and Electronic Structure of Platinium Oxide Thin Films Memoirs of The Institute of Science and Technology, Meiji University pp.27-32 (Collaboration)
21.	2007/03	Article	Present Status and Prospects of Inorganic EL Materials pp.7-12 (Single)
22.	2007/01	Book	PHOSPHOR HANDBOOK Second Edition pp.687-720 (Collaboration)
23.	2006/12	Article	Optical Properties of Blue-Emitting BaAl2S4:Eu Thin-Films for Inorganic EL Display Jornal of Rare Earths 24,pp.119-121 (Collaboration)
24.	2006/07	Article	Capacitance Temperature Sensor Using Ferroelectric (Sr0.95Ca0.05)TiO3 Perovskite Taylor&Francis・Ferroelectrics 331,pp.141-145 (Collaboration)
25.	2006/07	Article	Effects of Vacancies on the Dielectric and Piezoelectric Properties of (Na0.5K0.5)NbO3-SrTiO3 Solid Solution Taylor & Francis・Ferroelectrics 331,pp.135-139 (Collaboration)
26.	2006/06	Article	Brightness Technology Clarifies Future Inorganic EL Displays Dempa Publication 53(6),pp.23-26 (Single)
27.	2006/03	Article	Optical properties of Palladium Oxide Thin Films Prepared by Reactive Sputtering Research Reports School of Science and Technology, Meiji University pp.13-17 (Collaboration)
28.	2006/01	Article	Optical Properties of Tungsten Oxide Thin Films Doped with Nitrogen Memories of The Institute of Science and Technology, Meiji University pp.9-15 (Collaboration)
29.	2005/08	Article	Inorganic Electroluminescent Display The Journal of The Institute of Electronics, Information and Communication Engineers pp.653-658 (Single)
30.	2005/05	Article	Ternary compound phosphor thin films for electroluminescent displays pp.617-621 (Collaboration)
31.	2005/02	Article	Preparation and Optical Properties of Zirconium-Titanium-Oxide Thin Films by Reactive Sputtering The Institute of Pure and Applied Physics・Japanease Journal of Applied Physics 44(2),pp.1013-1018 (Collaboration)
32.	2004/11	Article	Electroluminescence The Society of Inorganic Materials, Japan (Single)
33.	2004/09	Article	Annealing Study for Color EL Devices Conference Proceedings of 12th International Workshop on Inorganic and Organic Electroluminescence & 2004 International Conference on the Science and Technology of Emissive Displays and Lighting pp.77-79 (Single)
34.	2004/05	Article	Color Phosphors for Inorganic Electroluminescent Devices Society for Information Display 2004 International Symposium Digest of Technical Papers XXXV,pp.1142-1145 (Single)
35.	2004	Article	Electrical properties of β-FeSi2/Si Hetero-Diode Improved by Pulsed Laser Annealing Material Research Society・Symposium Proceedings 799,pp.133-138 (Collaboration)
36.	2003/01	Article	New red-emitting CaY2S4:Eu thin-film electroluminescent devices The Institute of Pure and Applied Physics (IPAP)・Japanease Journal of Applied Physics 42(1A/B),pp.L42-43 (Collaboration)
37.	2003	Article	Composition of β-FeSi2 Thin-films Grown by a Pulsed Laser Deposition Method Material Research Society・Symposium Proceedings 744,pp.309-312 (Collaboration)
38.	2002/12	Article	New II-Y2-S4 Phosphors for Electroluminescent Devices Society for Information Display (SID)・Proceedings of The Ninth International Display Workshops (IDW'02) pp.1407-1408 (Collaboration)
39.	2002/09	Article	Mn2+ and Eu2+ Doped Barium Zinc Sulfide Phosphors Proceedings of 11th International Workshop on Inorganic and Organic Electroluminescece & 2002 International Conference on the Science and Technology of Emissive Displays and Lighting (Collaboration)
40.	2002/09	Article	Possibility of RGB Emission by Eu2+ ion doped IIa-IIIb2-S4 phosphors for Full Color Inorganic Electroluminescent Displays Proceedings of 11th International Workshop on Inorganic and Organic Electroluminescece & 2002 International Conference on the Science and Technology of Emissive Displays and Lighting (Collaboration)
41.	2002/08	Article	Improved luminous efficiency of blue-emitting BaAl2S4:Eu electroluminescent devices The Institute of Image Information and Television Engineers・The Journal of the Institute of Image Information and Television Engineers pp.1273-1278 (Collaboration)
42.	2002/07	Article	Recent R&D Trends and Future EL DIsplay challenges pp.17-20 (Single)
43.	2002/01	Article	Crystallographic and Iuminescent charcterization of blue-emitting BaAl2S4:Eu electroluminescent thin films Elsevier ・ Journal of Luminescence 96,pp.69-74 (Collaboration)
44.	2002/01	Article	Evaluation of Hafnium-Titanium-Oxide Thin Films Prepared by Reactive Sputtering 日本真空協会・Journal of the Vacuum Society of Japan 45(1),pp.18-25 (Collaboration)
45.	2001/10	Article	BaAl2S4:Eu Phosphor for Full-Color EL Display Society for Information Display (SID)・Proceedings of The 21st International Display Research Conference in conjunction with The 8th International Display Workshop (ASIA DISPLAY / IDW'01) pp.1059-1062 (Single)
46.	2001/10	Article	Preparation of Efficient Blue Emitting BaAl2S4:Eu Thin Films without High Temperature Annealing Society for Information Display (SID)・Proceedings of The 21st International Display Research Conference in conjunction with The 8th International Display Workshop(ASIA DISPLAY / IDW'01) pp.1075-1078 (Collaboration)
47.	2001/09	Article	Prepareation and evaluation of zirconium oxide thin films doped with titanium by reactive sputtering method pp.1-9 (Collaboration)
48.	2001/09	Article	Present Status and Prospects of Inorganic EL Devices Materials Integration Electronic Ceramics pp.41-45 (Single)
49.	2001/04	Article	Atomic Composition and Structural Properties of Blue Emitting BaAl2S4:Eu Electroluminescent Thin Films 応用物理学欧文誌刊行会・Japanease Journal of Applied Physics 40(4A),pp.2451-2455 (Collaboration)
50.	2000/12	Article	Blue-emitting BaAl2S4:Eu2+ thin film EL devices Proceedings of the 10th international workshop on inorganic and organic electroluminescence (EL'00) pp.465-470 (Single)
51.	2000/12	Article	Composition and luminescent properties of blue-emitting BaAl2S4:Eu electroluminescent thin films Proceedings of the 10th international workshop on inorganic and organic electroluminescence (EL'00) pp.125-128 (Collaboration)
52.	2000/12	Article	Crystallization of thin-film phosphors by new annealing technique Proceedings of the 10th international workshop on inorganic and organic electroluminescence (EL'00) pp.121-124 (Collaboration)
53.	2000/12	Article	Eu2+ doped barium thioaluminate EL devices prepared by two-target pulsed-electron-beam evaporation Society for Information Display(SID)・Journal of the Society for Information Display 8(3),pp.247-251 (Collaboration)
54.	2000/10	Article	Blue-Emitting BaAl2S4:Eu Thin-Film Electroluminescent Devices Prepared by Two Targets Pulse Electron Beam Evaporation The Institute of Electronics, Information and Communication Engineers　・　IEICE Transactions on Electronics E83-C(10),pp.1618-1621 (Collaboration)
55.	2000/08	Article	β-FeSi2 thin-films grown by a pulsed laser ablation method Proceeding of Japan-UK joint workshop on ecologically friendly semiconductors pp.77-79 (Collaboration)
56.	2000/03	Article	Optical Properties of the Hafnium doped vanadium oxide thin-films prepared by RF reactive sputtering Memoirs of the institute of science and technology, Meiji University pp.61-68 (Collaboration)
57.	2000	Article	β-FeSi2 thin-films-grown by a pulsed laser deposition method Material Research Society・Symposium Proceedings ???,pp.??-?? (Collaboration)
58.	1999/12	Article	Blue Emitting BaAl2S4:Eu TFEL Devices Prepared by Two Targets Pulse Electron Beam Evaporaton Society for Information Display (SID)・Proceedings of the sixth international display workshops(IDW'99) pp.821-824 (Collaboration)
59.	1999/11	Article	High-Luminance Blut-Emitting BaAl2S4:Eu Thin-film Electroluminescent Devices 応用物理学欧文誌刊行会・Jpnease Journal of Applied Physics 38(11B),pp.L1291-L1292 (Collaboration)
60.	1997/03	Article	Eu concentration dependence of excitation and emission spectra in BaF2:Eu single crystals pp.23-30 (Collaboration)
61.	1997	Article	Electroluminescence Spectra for Tb3+ doped ZnrxCdxS thin-films Elsevier　・　Journal of Luminescence 72-74,pp.999-1001 (Collaboration)
62.	1994	Article	Blue-emitting EL Materials : Several Host Materials Display and Imaging pp.195-201 (Collaboration)
63.	1994	Article	Electroluminescenct devices of electron-beam evaporated II-III2VI4 hosts Science Press・Proceedings of 1994 International Workshop on Electroluminescence (Collaboration)
64.	1994	Article	Electroluminescent Spectra of rare-earth-doped ZnS1-x Sex thin films Elsevier ・ Journal of Crystal Growth 138,pp.1046-1050 (Collaboration)
65.	1993/03	Article	Blue Emitting CaF2:Eu Thin Film Electroluminescent Device Research Reports, School of Science and Technology, Meiji University pp.1-7 (Collaboration)
66.	1993/03	Article	Dependence of Excitation Pulse Width for the Emission Spectra in ZnS:Er,Yb Thin Film Electroluminescent Devices Research Reports, School of Science and Technology, Meiji University pp.9-13 (Collaboration)
67.	1993/03	Article	Electroluminescence for CdF2 and ZnF2 Thin-Film Doped with Rare Earth Ions Research Reports, School of Science and Technology pp.15-22 (Collaboration)
68.	1993/01	Article	Excitation process for AC thin film electroluminescent devices doped with localized emission center pp.31-62 (Single)
69.	1992/03	Article	Blue emitting electroluminescence in ZnS:Tm3+ thin films pp.29-35 (Collaboration)
70.	1992/03	Article	Effects of UV light irradiation on ZnS:TbFx thin film electroluminescent devices pp.49-62 (Collaboration)
71.	1992/03	Article	Electroluminescence from Y2O2S:Eu thin films pp.37-41 (Collaboration)
72.	1992/02	Article	Band-Gap Energy Dependence of Emission Spectra in Rare Earth-Doped Zn(1-x)CdxS Thin-Film Electroluminescent Devices 応用物理欧文誌刊行会・Japanease Journal of Applied Physics 31(２A),pp.295-300 (Collaboration)
73.	1992/02	Article	Transient Behavior in ZnS:TbFx Thin-Film Electroluminescent Devices Excited by Very Short Pulse 応用物理欧文誌刊行会・Japanease Journal of Applied Physics 31(2A),pp.288-294 (Collaboration)
74.	1992/01	Article	Electroluminescence of ZnF_2 Thin-Films Doped with Rare-Earth Ions 応用物理学欧文誌刊行会・Japanese Journal of Applied Physics 31(1),pp.51-59 (Collaboration)
75.	1992/01	Article	Several Blue-Emitting Thin-Film Electroluminescent Devices 応用物理学欧文誌刊行会・Japanese Journal of Applied Physics 31(1A/B),pp.L46-L48 (Collaboration)
76.	1992	Article	Band-Gap Energy Dependence of Host Materials for Electroluminescent Spectra CINKO PUNTOS PRESS・Electroluminescence pp.404-409 (Collaboration)
77.	1991/10	Article	Strong Ultraviolet-Emitting ZnF2:Gd Thin Film Electroluminescent Device 応用物理欧文誌刊行会・Japanease Journal of Applied Physics 30(10B),pp.L1815-L1816 (Collaboration)
78.	1991	Article	Transient Characteristics of Emission in ZnS : Mn Thin-Film Electroluminescent Devices Society for Information Display (SID)・Proceedings of the Society for Information Display 32(3),pp.219-222 (Collaboration)
79.	1990/04	Article	Transient behavior in ZnS:TbFx thin film electroluminescent devices pp.25-32 (Collaboration)
80.	1990	Article	Transient Behavior of Photoluminescence and Electroluminescence in ZnS Thin Film Deped with Tb3+ion Finnish Academy of TechnologyActa Polytechnica Scandinavica 170,pp.241-244 (Collaboration)
81.	1989/10	Article	Transient characteristics of emission in ZnS:Mn thin film electroluminescent devices Society for Information Display (SID)・Proceedings of the 9th international display research conference (JAPAN Display '89) pp.70-73 (Collaboration)
82.	1989/01	Article	Emission Properties in Thin Film ZnS Electroluminescent Devices pp.33-38 (Collaboration)
83.	1989/01	Article	Fabrication of the alternating pulse generator for excitation of electroluminescent devices pp.27-32 (Collaboration)
84.	1989	Article	Time Resolved Emission Spectra in ZnS Thin Film Electroluminescent Devices Springer-Verlag・Springer Proceedings in Physics 38 Electroluminescence pp.44-47 (Collaboration)
85.	1988/11	Article	Broad Band Emission Behaviors in ZnS Thin Film Electroluminescent Devices 応用物理欧文誌刊行会・Japanease Journal of Applied Physics 27(11),pp.L2103-L2104 (Collaboration)
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■ Conference Presentations

1.	2019/10/29	Thermoelectric and photoelectric characteristics of graded films using Nb-doped SrTiO₃ (The Pacific Rim Conference of Ceramic Societies 13)
2.	2019/09/20	Effects of anode-side-CeO₂ layer on characteristics of DC-EL device
3.	2018/09/12	Electroluminescence from impact excitation and carrier injection process in a same devices (19th International Workshop on Inorganic and Organic Electroluminescence & 2018 International Conference on the Science & Technology of Emissive Display and Lighting (EL2018))
4.	2017/01/26	DC Biased Inorganic Electroluminescent Devices Having Cu2O Semiconductor
5.	2015/12/10	(The 22th International Display Workshops (IDW'15))
6.	2014/03/19	Silicon wire waveguide based optical switching device employing IPS liquid crystal
7.	2014/03/19	Vertical Light Coupling Between Silicon Vertically-Curved Waveguide and Optical Fiber
8.	2014/03/17	(Annual Meeting of The Ceramic Society of Japan, 2014)
9.	2014/01/24	Study of Carrier injection light-emitting devices using D-A Pair phosphor
10.	2013/12/05	Electroluminescence from DC Biased ZnS:TbF3 Phosphor Layers Having Oxide Semiconductor (The 20th International Display Workshops (IDW'13))
11.	2013/08/28	Vertically-Curved Silicon Waveguide Fabricated by Ion-Induced Bending Method for Vertical Light Coupling (The 10th International Conference on Group IV Photonics)
12.	2013/07/30	The Present Status and Future Prospects of Display Research
13.	2013/03/28	Epitaxial growth of ferromagnetic semiconductor Ga1-xMnxAs films on Ge(001) substrate (The 60th JSAP Spring Meeting, 2013)
14.	2013/03/17	(Annual Meeting of Ceramic Society of Japan, 2013)
15.	2012/12/07	Thin film perovskite electroluminescence with ferroelectric BaTiO3 films as insulating layers (The 19th International Display Workshops (IDW2012))
16.	2012/11/19	Switching Loss Analysis of Commercial 200V class GaN-HEMT and Si-Superjunction MOSFET (21st Meeting on SiC and Related Wide Bandgap Semiconductors)
17.	2012/11/08	Electroluminescence of BaSO4:Eu Thin-Film Phosphors (International Symposium on Rare Earths in 2012)
18.	2012/11/08	Luminescence Properties of Perovskite Oxide Thin-Film Phosphors (International Symposium on Rare Earth in 2012)
19.	2012/09/14	Ceramic EL device using Submicron Sized Oxide Phosphors
20.	2011/12/19	Nonlinear Electrical Current Observed for Thin Films based on a Light-Emitting Perovskite-Type Oxide Pr0.002(Ca0.6Sr0.4)0.997TiO3 Directly Sandwiched by Electrodes (The 21st MRS-Japan ACademic Symposium)
21.	2011/09/19	Nonlinear Electrical Properties of Thin Films ofa Light-Emitting Perovskite-Type Oxide Pr0.002(Ca0.6Sr0.4)0.997TiO3 (International Union of Materials Research Societies (IUMRS) International Conference Asia)
22.	2011/03	Fabrication of Single-Mode Nonlinear Optical Waveguide Including Carbon Nanotube Using Channel-Pouring Method
23.	2011/03	Theoretical study of GaN and SiC schottky barrier diode
24.	2011/02/10	AC EL from ZnS:Mn Powder
25.	2010/09/30	High luminance inorganic EL sheets basd on "peel-off" process (15th International workshop on inorganic and organic electroluminescence)
26.	2010/09/15	Electroluminescence from SrTiO3: Pr, Al epitaxial thin films
27.	2010/03/17	BaAlF5:Eu Electroluminescent Devices Prepared by Two-targets Pulsed-Electron-Beam Evaporation
28.	2010/01/28	BaAL2S4:Eu EL Devices Prepared by DC-Reactive-Sputtering
29.	2010/01/28	Si doped AlN:Eu Thin-Film EL Devices Prepared by Sputtering Methoed
30.	2010/01/19	Continual Challenge in The Development of Inorganic Phosphor based EL Devices (International Workshop on Field Emitter and Semiconductor Materials and Devices)
31.	2009/12/10	Low-Electric-Field-Driving Electroluminescence in ((Ca0.6Sr0.4)0.997Pr0.002)Ti3 and SrTiO3 perovskite Films (The 16th International Display Workshops (IDW' 09))
32.	2009/11/05	Continual Challenge in The Development of Electroluminescent Devices (International Symposium for Phosphor Materials 2009 in Niigata (The Phosphor Safari))
33.	2009/10/09	Improvement of the Phosphor Performance for BaAl2S4:Eu Blue-emitting Thin-films with Fluoride Compounds (The 11th Asian Symposium on Information Display (ASID’09))
34.	2009/09/10	BaAl2S4:Eu electroluminescence devices prepared by DC reactive sputtering
35.	2009/09/10	Electroluminescence in perovskite oxide (Ca0.6Sr0.4)TiO3:Pr thin films with BeTiO3 insulatino layers
36.	2009/09/10	Photoluminescence properties of β-FeSi2 thin-film orepared by pulsed laser deposition
37.	2009/09/10	Preparation of thick-film dielectric sheets for EL devices
38.	2009/09/10	Study of BaAl2S4:Eu EL devices Using Thick-Dielectric Film
39.	2009/06	Perceptibility of environmental sounds by earphone wearers listening to pop and rock music
40.	2009/03/31	Electroluminescence in perovskite oxide (Ca0.6Sr0.4)TiO3:Pr thin films
41.	2009/01/29	Study of BaAl2S4:Eu EL Devices Using Thick Dielectric Film
42.	2008/12/18	Inorganic Electroluminescence from ZnS Based Phosphors
43.	2008/12/04	High-Luminance from Localized Emission Center Phosphor in Powder-Type EL Device (The 15th International Display Workshops)
44.	2008/09/11	New Trial of Inorganic EL Devices (14th International Workshop on Inorganic and Organic Electrolumienescence & 2008 International Conference on the Science and Technology of Emissive Displays and Lightings)
45.	2008/09/09	Fluorine Effects on BaAl2S4:Eu Blue-Emitting Phosphors (14th International Workshop on Inorganic and Organic Electrolumienescence & 2008 International Conference on the Science and Technology of Emissive Displays and Lightings)
46.	2008/01	Local Structure around Ba2+ and Eu2+ Ions in Blue Luminescent BaAl2S4:Eu Thin Films
47.	2008/01	Luminescence GdF3 co-doped BaAl2S4:Eu blue-emitting phosphors
48.	2007/11	Inorganic EL phosphors based on ZnS doped with some elements
49.	2007/09	Characterization of β-FeSi2/Si hetero-junction diodes prepared with laser-ablated Fe films.
50.	2007/09	Discussion on high-luminance ZnS Phosphor for electroluminescent devices
51.	2007/09	Effects on AlF3-doping during the deposition of BaAl2S4:Eu thin-film phosphors
52.	2007/09	Effects on GdF3 co-doping for BaAl2S4:Eu blue-emitting phosphors
53.	2007/09	Electroluminescence from ZnS D-A Pair Type Phosphors Doped with Ⅲ-Ｖ Compounds (3)
54.	2007/09	Local structure of Ba and doped Eu in Inorganic Electroluminescent Thin Film BaAl2S4:Eu studied by XAFS
55.	2007/09	Optical Properties of Au-doped V2O5 Thin Films Prepared by Reactive Sputtering
56.	2007/09	Optical Properties of Molybdenum Oxide Thin Films Prepared by Reactive Sputtering
57.	2007/09	Preparation of Platinum and Palladium Composite Oxide Thin Films Deposited by Reactive Sputtering
58.	2007/09	Substrate Temperature Dependence of Bi2O3-TiO2 Thin Films Prepared by RF Sputtering Method
59.	2007/07	High Luminance Phosphors for Electroluminescent Devices
60.	2007/05	Flux Effects on BaAl2S3:Eu,F Blue-Phosphors
61.	2007/03	Electroluminescence from ZnS D-A Pair Type Phosphors Doped with III-V Compounds (2)
62.	2007/03	RT CNT Single Electron Transistor Formed by RF Plasma
63.	2007/03	Ternary Compound Phosphors for Electroluminescent Displays
64.	2007/02	Present Status of Distributed and Thin-Film Inorganicc EL
65.	2007/01	Luminescent Properties of ZnS Doped with Ⅲ-Ⅴ Semiconductors
66.	2007/01	Optical Properties of Electron-Beam-Evaporated BaAl2S4:Eu Thin-films
67.	2006/09	Effects of V2O5 interlayer on ZnS:Mn-ACTFEL Devices
68.	2006/09	Phosphor Studies for Color EL Devices
69.	2006/08	Electroluminescence from ZnS D-A Pair Type Phosphors Doped with III-V Compounds
70.	2006/08	Red-Emitting CuAl2S4:Mn Thin-Films for Electroluminescent Devices
71.	2006/05	Capacitance Temperature Sensor Made of Ferroelectric (Sr1-xCax)TiO3 for Cryogenic Temperatures
72.	2006/03	Thermal-Diffusion of The Atoms in Laser-Abrated B-FeSi2 Thin-Films
73.	2005/11	Full Color Inorganic Electroluminescent Devices
74.	2005/03	BaAl2S4:Eu Thin Films Prepared by Sputtering
75.	2005/03	Optical and Electrical Properties of Bi2O3-TiO2 Thin Films Deposited by Sputtering.
76.	2005/03	Optical and Electrical Properties of Y Oxide Thin Films deposited by Reactive Sputtering
77.	2005/03	Optical Properties and Annalysis of Electronic Structure of W Oxide Thin Films Doped with Nitrogen Deposited by Reactive Sputtering
78.	2005/01	BaAl2S4:Eu thin-films prepared by rf Sputtering
79.	2005/01	Thin-Film Electroluminescent Devices Prepared by Laser Annealing Method
80.	2005/01	White emitting TFEL devices using hypercomplex sulfide phosphors
81.	2004/09	Annealing Study for Color EL devices
82.	2004/09	Optical properties and electronic structures analysis of impurity-doped oxide thin films
83.	2004/09	Optical properties of impurity-doped Pd oxide thin-films deposited by reactive sputtering
84.	2004/07	SID'04 報告会　－Emissive Display<Inorganic EL, Phosphors>ー
85.	2004/05	Color Phosphors for Inorganic Electroluminescent Devices
86.	2004/03	ZnGa2S4:Mn thin-film electroluminescent devices fabricated by magnetron sputtering
87.	2003/12	Electrical Properties of β-FeSi2/Si Hetero-Diode Improved by Pulsed Laser Annealing
88.	2003/10	Photoluminescence from β-FeSi2 Thin Film Grown by a Pulsed Laser Deposition Method.
89.	2003/09	Laser annealed barium titanate thin films prepared by sol-gel processing
90.	2003/09	Red emitting inorganic electroluminescent devices including color-changing-mediums technique
91.	2003/09	Red emitting ZnGa2S4:Mn thin-film EL devices
92.	2003/08	Optical and electric properties of Cr oxide thin films doped with Zr deposited by reactive sputtering
93.	2003/08	optical properties and electronic structures analysis of impurity-doped W oxide thin films
94.	2003/08	Optical properties of Pd oxide thin films deposited by reactive sputtering
95.	2003/08	Optical properties of Zr-Mn oxide thin films
96.	2003/03	A pulsed laser ablation method grown β-FeSi2 thin-films using buffer layer
97.	2003/03	Energy dependence of spatial distribution in STJ X-ray detector
98.	2003/03	Fabrication of superconducting tunnel junction X-ray detectors by full dry process
99.	2003/03	High color purity green electroluminescent devices using CaAl2S4:Eu
100.	2003/03	Improvement of crystalinity and electrical characteristics for excimer-laser annealed β-phase iron disilicide
101.	2003/03	Optical properties of W oxide thin films doped with V deposited by reactive sputtering
102.	2003/01	Characteristics of A-(Mg,Zn)-S (A=Ca,Sr,Ba) for EL phosphor
103.	2003/01	High color purity green electroluminescent devices used Eu2+ doped CaAl2S4
104.	2003/01	Mn2+ doped (Zn,Mg)Al2S4 electroluminescent phosphor
105.	2002/12	11th international workshop on electroluminescence and 2002 international conference on the science and technology of emission displays and lightings -Inorganic Electroluminescence-
106.	2002/12	Composition of β-FeSi2 thin-films grown by a pulsed laser deposition method
107.	2002/12	New II-Y2-S4 phosphors for electroluminescent devices
108.	2002/09	Electrical structures analysis of impurity-doped Mo oxide thin films
109.	2002/09	Fabrication of superconducting tunnel junctions with lift-off technique
110.	2002/09	Improvement of β-FeSi2 crystalline preparing a pulsed laser abration method by using the long-time and high temperature annealing
111.	2002/09	Mn2+ and Eu2+ doped barium zinc sulfide phosphors
112.	2002/09	Optical properties of nickel-titanium oxide thin films deposited by sputtering
113.	2002/09	Optical properties of W-Nb oxide thin films deposited by reactive sputtering
114.	2002/09	Possibiity of RGB emission by Eu2+ ion doped IIa-IIIb2S4 phosphors for full color inorganic electroluminescent displays
115.	2002/09	Water quantitative analysis of blue-emitting BaAl2S4:Eu thin-films
116.	2002/07	Mn2+ and Eu2; doped barium zinc sulfide phosphors
117.	2002/07	Possibility of fuRGB Emission by Eu2+ ion doped IIa-IIIb2-S4 phosphors for full color electroluminescent displays
118.	2002/06	Recent status and prospects of inorganic EL phosphors
119.	2002/03	BaAl2S4:Eu thin films deposited by laser ablation
120.	2002/03	Distribution properties of refractive index of zirconium oxide thin films deposited by sputtering
121.	2002/03	Electronic structure of Molybdenum oxide films calculated by DV-Xα method
122.	2002/03	Green emitting CaAl2S4:Eu thin-film EL devices
123.	2002/03	Study of blue-emitting BaAl2S4:Eu Thin-Film by thermal desorption spectroscopy
124.	2002/03	Surface segregation of β-FeSi2/Si prepared by a pulsed laser ablation method
125.	2002/03	Zn-doping effect on CaIn2S4:Eu phosphors
126.	2002/01	Annealig process of blue-emitting BaAl2S4:Eu thin-films
127.	2002/01	BaAl2S4:Eu thin-films prepared by laser ablation technique
128.	2002/01	BaMgAl10O17:Eu thin-films prepared by laser ablation
129.	2001/12	Ternary & multinary sulfide phosphors for electroluminescence
130.	2001/11	BaAl2S4:Eu Phosphors for Full-Color EL Display
131.	2001/11	Polymer one-dimentional photonic crystal by physical vapor deposition
132.	2001/11	Preparation of Efficient Blue Emitting BaAl2S4:Eu Thin Films without High Temperature Annealing
133.	2001/09	Analysis on annealing process of blue-emitting BaAl2S4:Eu thin-film by thermal desorption spectroscopy
134.	2001/09	BaMgA110017:Eu thin-films prepared by PLD method
135.	2001/09	Blue-emitting BaAl2S4:Eu thin-films prepared by anealingless process
136.	2001/09	Electrical and optical properties of nickel oxide thin-films deposited by reactive sputtering
137.	2001/09	Electrical characteristics of AlN TFEL devices
138.	2001/09	Laser-ablated β-FeSi2/Si hetero diode
139.	2001/09	Optical and electrical properties of V oxide thin films doped with Zr deposited by reactive sputtering
140.	2001/09	Optical properties of Mo oxide films doped with V deposited by reactive sputtering
141.	2001/03	Effects of Ti in ZrO2, Nb2O5 Thin Films Deposited by Reactive Sputtering
142.	2001/03	Electrical properties of β-FeSi2/Si hetero diode prepared by a pulsed laser ablation method
143.	2001/03	Optical Properties for Sputtered Ti Doped Hf Oxide Thin-Films(Ⅲ)
144.	2001/03	Optical Properties of Hf Doped V Oxide Thin Films Deposited by Reactive Sputtering(Ⅱ)
145.	2001/03	Optical Properties of Mo Oxide Films Deposited by Reactive Sputtering
146.	2001/03	Photoluminescence Properties of BaAl2S4: Eu Crystals
147.	2001/01	BaAl2S4: Eu Thin Film Electroluminescent Devices Prepared by Conventional Beam Euaporation Method
148.	2001/01	Electrical Characteristics of BaAl2S4: Eu EL Devices
149.	2001/01	White Emitting undoped Organic Electroluminescent Devices used Super-Thin-Film Layer
150.	2000/12	Blue-Emitting BaAl2S4: Eu2+ Thin-Film EL Devices
151.	2000/12	Composition and Luminescene Properties of Blue-Emitting BaAl2S4:Eu Thin-Films
152.	2000/12	Crystallization of Thin-Film Phosphors by New Annealing Technique
153.	2000/11	BaAl2S4:Eu Thin-Film EL Devices Prepared by Pulsed Laser Ablation Technique
154.	2000/11	β-FeSi2 thin-films grown by a pulsed laser Deposition method
155.	2000/09	BaAl2S4: Eu Thin-Film EL Devices Prepared by Pulsed Laser Ablation Technique
156.	2000/09	Composition Dependence of Bandgap energy in β-FeSi2 thin-films prepared by laser-ablation method
157.	2000/09	Deposition of BaAl2S4:Eu Phosphor Thin Films by Conventional EB Evaporation
158.	2000/09	Effects of Ti in Zro2 Thin Films Deposited by Reactive Sputtering
159.	2000/09	Growth mechanism of β-FeSi2 thin-films prepared by pulse-laser-ablation method
160.	2000/09	New High-Luminance blue-emitting TFEL devices(Ⅲ)
161.	2000/09	Optical Properties for Sputtered Ti Doped Hf Oxide Thin-Films(II)
162.	2000/09	Optical Properties of Hf Doped V Oxide Thin Films Deposited by Reactive Sputtering
163.	2000/09	Theoritical calculation of Refractive indices for hybrid oxide thin films
164.	2000/08	β-FeSi2 thin-films grown by a pulsed laser ablation method
165.	2000/05	Composition and Optical Properties of Blue-Emitting BaAl2S4:Eu2+ Electroluminescent Thin Films
166.	2000/03	AlN thin-film EL devices with SrTiO3 insulator
167.	2000/03	An XPS study of BaAl2S4:Eu thin films prepared by switching electron-beam evaporation with two targets
168.	2000/03	Effects of buffer layer doped with impurities on electroluminescence II
169.	2000/03	Effects of Ti in Nb25 films deposited by reactive sputtering
170.	2000/03	New high luminance blue-emitting TFEL devices (II)
171.	2000/03	Optical properties for sputterd Ti doped Hf oxide thin-films
172.	2000/03	Optical properties of BaAl2S4:Eu thin-films prepared by switching electrom-beam evaporation with two targets
173.	2000/03	PrxSr1 -xTiO3 thin-film EL devices
174.	2000/03	β-FeSi2 thin-films grown by laser ablation method
175.	2000/02	Report on 5th international display phosphor conference -Inorganic-
176.	2000/01	Effects of buffer layer for TFEL devices
177.	2000/01	Eu2+ doped BaAl2S4 blue emitting thin-film EL devices
178.	1999/12	Blue Emitting BaAl2S4:Eu TFEL Devices Prepared by Two Targets Pulse Electron Beam Evaporation
179.	1999/12	Blue-emitting BaAl2S4:Eu2+ thin-film electroluminescent devices
180.	1999/11	CaIII2S4:Ce Electroluminescent Devices Prepared by Pulse Deposition Technique
181.	1999/11	Electroluminescence of BaAl2S4:Eu phosphor thin-films
182.	1999/09	AlN thin film EL devices doped with rare-earth
183.	1999/09	Effects of buffer layer doped with impurities on electroluminescence
184.	1999/09	New high brightness blue-emitting TFEL devices
185.	1999/09	Optical properties for reactive sputtered Ta25:Ti films
186.	1999/09	PrxSr1 -xTiO3 thin film EL devices deposited by RF magnetron sputtering
187.	1999/09	SrF2 thin film electroluminescence devices
188.	1999/01	CaAl2S4:Ce thin-film EL devices prepared by two targets pulse electron-beam evaporation
189.	1999/01	Efficient blue-emitting CaGa2S4:Ce thin-film electroluminescent devices prepared by two targets pulse electron beam evaporation method
190.	1998/09	CaAl2xGa2(1-x)S4:Ce thin-film EL devices prepared by two point EB evaporation method
191.	1998/09	CaF2:Eu 薄膜EL素子
192.	1998/09	Thin-film EL devices of PrxSr1-xTiO3
193.	1998/03	CaAl2S4S4:Ce thin-film EL devices prepared by two point EB evaporation method
194.	1998/03	Electroluminescence of Al1-xGaxN thin-films doped with rare-earth ions
195.	1998/03	Optical properties of Hf1+xTi1-xO4 films prepared by He gas mixed RF magnetron sputtering (II)
196.	1998/03	Optical properties of Ta2O5:Ti films deposited by sputtering (II)
197.	1997/11	CaGa2S4:Ce Electroluminescent Devices Prepared by The Two Target Electron-Beam Evaporation
198.	1997/10	CaGa2S4:Ce thin-film EL devices prepared by two point EB evaporation method
199.	1997/10	Electroluminescence of AlN thin-films doped with rare-earth ions
200.	1997/10	Irradiation He-Cd laser on Zn1-xMgxS thin-film EL devices
201.	1997/10	Optical properties of Hf1+xTi1-xO4 films prepared by He gas mixed RF magnetron sputtering
202.	1997/10	Optical properties of Nb25:Ti films deposited by sputtering
203.	1997/10	Thin-film EL devices of ITO:Ln
204.	1997/03	Effects of He gas during sputtering for Hf1+xTi1-xO4 thin-films.
205.	1997/03	Optical properties for Ta2O5:Ti sputterd thin-films
206.	1997/03	Zn1-xMgxF2 thin-film EL devices
207.	1996/09	Effects of He gas on deposition of sputtered ITO thin-films
208.	1996/09	Infrared emission of ZnS thin films doped with rare-earth ions
209.	1996/09	Optical properties of Hf1+xTi1-xO4 films by RF sputtering
210.	1996/08	Electroluminescent Spectra for Tb3+ Doped Zn1-xCdxS Thin-Films
211.	1996/03	Preparation of Zr1+xTi1-xO4 films by RF co-sputtering
212.	1996/03	Relaxation for Tb3+ ion in Zn1-xCdxS:TbOF thin film EL devices
213.	1996/03	ZnO-In2O3 thin-films prepared by magnetron sputtering
214.	1995/11	Several Trial for New Phosphors of Electroluminescent Devices
215.	1995/08	Zn1-xMgxS:Eu thin-film EL devices
216.	1995/03	Applicattion of the IIb-III2-VI4 compounds for thin-film electroluminescent devices
217.	1995/03	Photoluminescence for SrCa1-y-xBaxF2:Eu single crystals
218.	1995/03	Temperature dependence of CdF2 thin-film electroluminescent devices (II)
219.	1995/03	Thin-film electroluminescent devices having Ln2O2S host
220.	1994/10	Electroluminiscent Devices of Electron-Beam-Evaporated II-III2-VI4 Hosts
221.	1994/09	Application of the IIb-IIIb2VI4 compounds for thin-film electroluminescent devices
222.	1994/03	5D3->5D4 relaxation for Tb3+ ion in ZnxCd(1-x)S:Tb3+ EL devices
223.	1994/03	Eu concentration dependence of evcitation and emission spectra in BaF2:Eu single crystals
224.	1994/01	Thin-film electroluminescent devices doped with Tm3+ ion
225.	1993/12	Blue-emitting CaGa2S4:Ce thin-film electroluminescent devices
226.	1993/09	Blue-emitting La2O2S:Tm thin-film electroluminescent devices
227.	1993/09	Blue-emitting thin film electroluminescent devices of CaF2:Eu and CaGa2S4:Ce
228.	1993/09	Electroluminescent spectra for ZnS(1-x)Sex:Tm3+ thin-film EL devices
229.	1993/09	Temperature dependence of CdF2 thin-film electroluminescent devices
230.	1993/08	Electroluminescence spectra for rare-Doped Zn1-xCdxS thin films
231.	1993/08	Electroluminescence spectra for rare-Doped ZnS1-xSex thin films
232.	1993/05	Rare Earth Doped Thin Film Electroluminescent Devices Using the Fluoride Emitting Layer
233.	1993/01	Thin-film electroluminescent devices using the fluoride emitting layers
234.	1992/12	Thin-film electroluminescence of several compounds doped with Tm3+ ion
235.	1992/09	Band-gap energy dependence of host materials for electroluminescent spectra
236.	1992/09	Thin-film electroluminescent devices having CdF2 host
237.	1992/09	Time resolved emission spectra for ZnS:Tm3+ thin film EL devices
238.	1992/05	Band-Gap Energy Dependence of Host Materials for Electroluminescent Spectra
239.	1992/01	Band-gap energy dependence for the EL spectra in Tm ion doped thin-films
240.	1991/11	ZnF2 thin-film electroluminescent devices doped with rare-earth ions
241.	1991/10	Blue-emitting CaF2:Eu thin-film electroluminescent devices
242.	1991/10	Blue-emitting thin-film electroluminescence of several host materials doped with Tm3+ ion
243.	1991/10	Dependence of applied pulse width for emission intensity in ZnS:Er,YbFx thin-film EL devices
244.	1991/10	Effects of UV light irradiation on ZnS:TbFx thin-film EL devices (II)
245.	1991/10	ZnF2 thin-film electroluminescent devices doped with rare-earths
246.	1991/09	Effect of UV light irradiation on ZnS thin-film electroluminescent films
247.	1991/03	Effects of UV light irradiation on ZnS:TbFx thin-film EL devices
248.	1991/03	Electroluminescence in ZnS:Tm3+ thin-films
249.	1990/09	Electroluminescence in Y2O2S:Eu thin-films
250.	1990/09	Transient behavior in ZnS:Mn and ZnS:Tb thin-films
251.	1990/06	Transient Behavior of Photoluminescence and Electroluminescence in ZnS Thin Film Doped with Tb3+ Ion
252.	1990/03	Photoluminescence of ZnS:TbFx Thin-films
253.	1990/03	Time resolved emission spectra for SrS:Ce thin-film electroluminescent devices
254.	1989/10	Transient Characteristics of Emission in ZnS:Mn Thin Film Electroluminescent Devices
255.	1989/09	Transient characteristics in ZnS:TbFx thin-film electroluminescent devices
256.	1989/04	Time responses of ZnS:TbFx thin-film electroluminescent devices at different heattreatment temperature
257.	1988/10	Heattreatment temperature dependence of emission layer in time-resolved emission spectra of ZnS:TbFx thin film electroluminescent devices
258.	1988/10	Red emitting electroluminescence in ZnS:EuFx thin-film coactivated by Li+1 ion
259.	1988/10	Time Resolved Emission Spectra in ZnS thin-film Electroluminescent Devices
260.	1988/03	Transient characteristics of emission in ZnS:TbF3 TFEL devices (III)
261.	1987/10	Transient characteristics of emission in ZnS:TbF3 TFEL devices (II)
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■ Academic Qualifications

1.	1992/03 Degree Acquisition	Meiji University,
2.	1987/04～1992/03	〔Doctorial Course〕, Graduate School, Division of Engineering, Meiji University, Completed,

■ Research Topics, Consignment Studies & KAKENHI Researches

1.		Functionable Thin Film (Key Word : thin film,,)
2.		Thin Film Emissive Devices (Key Word : Thin Film,Emission,)
3.		Thin Film Electroluminescent Display (Key Word : Thin-Film,EL,)
4.		Oxide Electronics (Key Word : Oxide,Semiconductor,Function Device)
5.		Photonic Crystal (Key Word : Photonic Crystal,,)
6.		"Kankyo" Semiconductor (Key Word : FeSi2,solae cell,emissive devaice)
7.		Organic Thin Film Devices (Key Word : OLED,organic TFT,)
8.		Cabon Nano Tube (Key Word : Cabon Nano Tube,CNT,)
9.		Licence and Development of BaAl2S4:Eu Phosphor Tecnology (Key Word : )
10.		Electrical Properties for Carbon Nano Tube (Key Word : )
11.	1999	Phosphor (Key Word : "Phosphor,,")
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■ Award History

2003

Society For Information Display (SID) Special Recognition Award

■ Current Specialized Field

Electron device and electronic equipment, Applied physical properties

■ Patents

1.		Phosphor and EL Panel
2.		Phosphor thin-film, its fabrication process and EL panel
3.		Treated Phosphor, making method, thin-film making apparatus, and EL device
4.		Treated phosphor, making method, thin film making apparatus, and EL device
5.		Phosphor thin-film, manufacturing method of the same, and electroluminescent panel
6.		Perovskite oxide thin-film EL element
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