1.
|
2018/11/12
|
Enhancement and stabilization of blue photoluminescence from Eu and Si codoped AlN films formed by reactive co-sputtering(International Workshop on Nitride Semiconductors (MoP-CR-11) 2018)
|
2.
|
2018/09/20
|
スパッタリング法によるEu,Si共添加AlN薄膜の形成における共添加材料の検討(第79回応用物理学会秋季学術講演会(20p-235-10))
|
3.
|
2018/09/19
|
共スパッタリング法により形成したMgSiSn薄膜の電気特性(第79回応用物理学会秋季学術講演会(19a-436-6))
|
4.
|
2018/07/22
|
薄膜の物性評価の基礎と最近のトピックス(第18回シリサイド系半導体夏の学校)
|
5.
|
2018/07/21
|
a-Si/β-FeSi2複合薄膜の形成と半導体全固体二次電池への応用(第18回シリサイド系半導体夏の学校)
|
6.
|
2018/07/21
|
Si系ナノ結晶の形成における熱処理条件およびカーボン添加が光学特性に及ぼす影響(第18回シリサイド系半導体夏の学校)
|
7.
|
2018/07/21
|
共スパッタリング法によるMgSiSn薄膜の形成と物性評価(第18回シリサイド系半導体夏の学校)
|
8.
|
2017/10/17
|
Blue and red photoluminescence from Eu and Si codoped AlN films formed by reactive co-sputtering(TACT2017 International Thin Films Conference (C-P-0171))
|
9.
|
2017/10/17
|
Prediction of nanocrystalline-Si size in SiO2 matrix based on LSW theory(TACT2017 International Thin Films Conference (C-P-0147))
|
10.
|
2017/09/08
|
共スパッタリング法によるMg2Si1-xSnx薄膜の形成(第78回応用物理学会秋季学術講演会(7p-PB4-7))
|
11.
|
2017/08/10
|
Crystal Growth of Mg2Si for Thermoelectric Applications by the Liquid Encapsulated Vertical Gradient Freezing Method(EMN 3CG & Metallic Glasses Meeting (pp.35-36))
|
12.
|
2017/07/29
|
VGF法によるMg2Si結晶成長における原料形態および液体封止材の充填量の影響(第17回シリサイド系半導体夏の学校(p.53))
|
13.
|
2017/07/29
|
共スパッタ法によるアモルファスSi/β-FeSi2複合薄膜の形成および物性評価(第17回シリサイド系半導体夏の学校(p.45))
|
14.
|
2017/03/15
|
LSW理論に基づくSiO2薄膜中のナノ結晶Siの粒径予測(第64回応用物理学会春季学術講演会(15a-411-5))
|
15.
|
2016/09/15
|
Mg2Si薄膜の固相成長におけるAg添加の影響と二段階熱処理の効果(第77回応用物理学会秋季学術講演会(15a-B3-9))
|
16.
|
2016/09/06
|
Bulk Single Crystal Growth of Mg2Si by the Liquid Encapsulated Vertical Gradient Freezing Method(Energy, Materials and Nanotechnology, the Collaborative Conference on Crystal Growth (EMN-3CG))
|
17.
|
2016/08/09
|
Formation of Eu,Si codoped AlN thin films on Si substrate by reactive co-sputtering for heterojunction visible light emitting diode(The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18) (TuP-T09-8))
|
18.
|
2016/08/09
|
Si-based visible luminescent material grown on Si substrates by chemical reaction with Si powder(The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18) (Tu1-G03-7))
|
19.
|
2016/08/09
|
Vertical Gradient Freeze Growth of Mg2Si crystals using Liquid Encapsulated Liquinert Process(The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18) (TuP-G06-35))
|
20.
|
2016/03/21
|
VGF法によるMg2Si結晶成長における原料の形状・純度と封止剤のハロゲン処理の影響(第63回応用物理学会春季学術講演会(21p-S223-15))
|
21.
|
2015/11/17
|
Fabrication and optical characterization of p-ZnO:Cu,N/n-SiC heterojunctions(International Thin Films Conference (TACT2015))
|
22.
|
2015/11/17
|
Formation of amorphous Si/β-FeSi2 composite thin films by co-sputtering(International Thin Films Conference (TACT2015))
|
23.
|
2015/11/17
|
Optical and structural properties of SixC1-x alloy thin films prepared by RF magnetron sputtering(International Thin Films Conference (TACT2015))
|
24.
|
2015/11/17
|
Visible and 1.5μm luminescence from SiO2 thin films codoped with nc-Si and Er(International Thin Films Conference (TACT2015))
|
25.
|
2015/09/14
|
AlN:Eu薄膜の光物性評価と発光デバイスの作製(第76回応用物理学会秋季学術講演会(14a-2B-5))
|
26.
|
2015/06/17
|
Photoluminescence and Electroluminescence from SiO2 Thin Films(The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2015))
|
27.
|
2015/03/13
|
共スパッタリング法によるアモルファスSi/β-FeSi2複合薄膜の形成(第62回応用物理学会春季学術講演会(13a-A25-9))
|
28.
|
2015/03/13
|
液体封止VGF法によるMg2Siバルク結晶成長(第62回応用物理学会春季学術講演会(13a-A25-4))
|
29.
|
2015/03/12
|
RFマグネトロンスパッタリング法により作製したSixC1-x混晶薄膜の光学的・構造的特性(第62回応用物理学会春季学術講演会(12p-P17-6))
|
30.
|
2014/11/13
|
Formation of ZnGaON Films Prepared by Two Types of co-Sputtering using ZnO or Zn Target and their Optical Properties(AVS (American Vacuum Society) 61st International Symposium and Exhibition (AVS-61), Baltimore, USA (TF-ThP9))
|
31.
|
2014/11/11
|
Formation of AlN Thin Films by Direct Nitridation of Aluminum Thin Films and Their Visible Photoluminescence Property(AVS (American Vacuum Society) 61st International Symposium and Exhibition (AVS-61), Baltimore, USA (EM-TuP7))
|
32.
|
2014/11/11
|
Solid Phase Growth of Mg2Si Thin Films on Poly-Si/Glass Substrates Prepared by Aluminum Induced Crystallization(AVS (American Vacuum Society) 61st International Symposium and Exhibition (AVS-61), Baltimore, USA (EM-TuP9))
|
33.
|
2014/09/20
|
Mg2Si薄膜の固相成長中の熱処理雰囲気が膜質に与える影響(第75回応用物理学会秋季学術講演会(20a-A27-4))
|
34.
|
2014/09/19
|
p-ZnO:Cu,N/n-SiCヘテロ接合デバイスの作製と光物性評価(第75回応用物理学会秋季学術講演会(19p-A26-8 ))
|
35.
|
2014/09/19
|
ボールミルにおける溶媒条件がβ-FeSi2のプラズマ焼結に与える影響(第75回応用物理学会秋季学術講演会(19p-A27-17))
|
36.
|
2014/09/19
|
反応性RFスパッタ法によるZn3N2薄膜の形成におけるGa2O3添加の影響(第75回応用物理学会秋季学術講演会(19p-A26-19))
|
37.
|
2014/09/18
|
NH3およびN2を用いたAl薄膜の直接窒化によるAlN薄膜の形成(第75回応用物理学会秋季学術講演会(18a-A24-1))
|
38.
|
2014/07/20
|
Processing of fine β-FeSi2 powders and formation of β-FeSi2 by electric discharge plasma activated sintering(ICSS-Silicide 2014 (International conference and summer school on advanced silicide technology 2014), Tokyo, Japan (20-P20))
|
39.
|
2014/07/20
|
Solid phase growth of Mg2Si thin films on Si(111) and their optical, structural and electrical properties(ICSS-Silicide 2014 (International conference and summer school on advanced silicide technology 2014), Tokyo, Japan (20-AM-II-5))
|
40.
|
2014/07/20
|
Synthesis and crystallization of Mg2Si by the liquid encapsulated vertical gradient freezing method,(ICSS-Silicide 2014 (International conference and summer school on advanced silicide technology 2014), Tokyo, Japan (20-P11))
|
41.
|
2014/07/08
|
Processing of fine β-FeSi2 powders and formation of β-FeSi2 by electric discharge plasma activated sintering(International Conference on Thermoelectrics, Tennessee, USA (PA5-015))
|
42.
|
2014/07/08
|
Solid phase growth of Mg2Si thin films on Si(111) and their electrical, structural and optical properties(International Conference on Thermoelectrics, Tennessee, USA (PA2-039))
|
43.
|
2014/07/08
|
Sticking-free synthesis of Mg2Si by vertical gradient freezing method using liquid encapsulants(International Conference on Thermoelectrics, Tennessee, USA (PA2-036))
|
44.
|
2014/03/19
|
AIC多結晶Si基板上へのMg2Si薄膜の固相成長(第61回応用物理学会春季学術講演会)
|
45.
|
2013/11/26
|
HFCVD法を用いた炭素系薄膜の形成と光学的評価(2013年真空・表面科学合同講演会(第33回表面科学学術講演会・第54回真空に関する連合講演会),筑波)
|
46.
|
2013/09/18
|
GaおよびN添加ZnO薄膜の電気伝導特性(2013年秋季第74回応用物理学会学術講演会)
|
47.
|
2013/09/18
|
NH3ガスを用いたAl薄膜の直接窒化によるAlN薄膜の形成(2013年秋季第74回応用物理学会学術講演会)
|
48.
|
2013/09/18
|
反応性スパッタ法により形成したAlN:Eu,Si薄膜のPL 発光特性(2013年秋季第74回応用物理学会学術講演会)
|
49.
|
2013/09/16
|
RF スパッタ法によるZnO 系薄膜の形成におけるGaN 添加とその後のNH3 窒化処理の影響(2013年秋季第74回応用物理学会学術講演会)
|
50.
|
2013/09/16
|
ナノ結晶Si を添加したSiOx薄膜の光学特性と電気特性(2013年秋季第74回応用物理学会学術講演会)
|
51.
|
2013/08/23
|
Optical and Electrical Properties of Nanocrystalline Si Doped SiOx Thin Films Formed by Co-Sputtering(The 25th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS25), Toronto, Canada)
|
52.
|
2013/08/20
|
Photoluminescence Properties of Er and Nanocrystalline-Si in SiO2 Films and Aqueous Solutions(The 25th International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS25)), Toronto, Canada)
|
53.
|
2013/07/27
|
Processing of nanoscale Fe-Si composite powders and formation of β-FeSi2 by electric discharge plasma activated sintering(Asia-Pacific Conference on Green Technology with Silicides and Related Materials (APAC-SILICIDE 2013), Tsukuba, Japan)
|
54.
|
2013/07/27
|
Solid phase growth of Mg2Si thin films on Si(100) and their optical, structural and electrical properties(Asia-Pacific Conference on Green Technology with Silicides and Related Materials (APAC-SILICIDE 2013), Tsukuba, Japan)
|
55.
|
2013/07/27
|
Synthesis of Mg2Si bulk crystal by vertical gradient freezing method using KCl as liquid encapsulant(Asia-Pacific Conference on Green Technology with Silicides and Related Materials (APAC-SILICIDE 2013), Tsukuba, Japan)
|
56.
|
2012/11/26
|
Effects of Ga doping and nitridation on ZnO films prepared by RF Sputtering(2012 Materials Research Society, Fall Meeting)
|
57.
|
2012/11/26
|
Optical band-gap of TiO2 nanopowders doped with Al2O3(2012 Materials Research Society, Fall Meeting)
|
58.
|
2012/11/02
|
Photoluminescence and electronic properties of nanocrystalline Si doped SiO2 thin films formed by co-sputtering(25th International Microprocesses and Nanotechnology Conference)
|
59.
|
2012/10/16
|
Photoluminescence and Structural Properties of AlN:Eu,Si Prepared by RF magnetron Co-sputtering Using Multiple Target Materials(The 7th International Workshop on Nitride Semiconductors, Sapporo, Japan.)
|
60.
|
2012/10/09
|
The effect of charged particle irradiation on the formation of carbon thin films by DC-biased hot wire chemical vapor deposition(7th International Conference on HWCVD)
|
61.
|
2012/09/14
|
RFスパッタ法によるZnO薄膜の作製におけるGa添加とその後の窒化処理の影響(2012年秋季第73回応用物理学会学術講演会)
|
62.
|
2012/09/13
|
ナノ結晶Siを添加したSiO2薄膜のPL発光および電気的特性評価(2012年秋季第73回応用物理学会学術講演会)
|
63.
|
2012/09/13
|
複合ターゲットを用いて反応性スパッタ法により作製したAlN:Eu,Si薄膜の発光、構造的特性の評価(2012年秋季第73回応用物理学会学術講演会)
|
64.
|
2012/09/12
|
Al2O3を添加したTiO2微粉末の光学バンドギャップ(2012年秋季第73回応用物理学会学術講演会)
|
65.
|
2012/07/29
|
FeSi 系粉末の微細化とプラズマ高速焼結法によるβ-FeSi2 バルクの形成(第14回シリサイド系半導体と関連物質研究会夏の学校)
|
66.
|
2012/07/29
|
Si(100)基板上に固層成長したMg2Si 薄膜の光学的・電気的特性(第14回シリサイド系半導体と関連物質研究会夏の学校)
|
67.
|
2012/03/17
|
Erおよびナノ結晶シリコンを添加したSiO2薄膜の発光特性(2012年春季 第59回 応用物理学関係連合講演会)
|
68.
|
2012/03/16
|
Si(100)基板上へのMg2Si薄膜の固相成長と諸特性(2012年春季 第59回 応用物理学関係連合講演会)
|
69.
|
2011/12/12
|
Deposition of TaN Films by RF sputtering and their barrier properties in Cu/TaN/Dielectrics/Si MIS structures(6th International Symposium on Surface Science (ISSS-6))
|
70.
|
2011/09/21
|
The Luminescence Property of SiO2 Thin Films Doped with Rare Earth and Nanocrystalline Si(International Union of Materials Research Societies and International Conference in Asia (IUMRS-ICA2011))
|
71.
|
2011/09/20
|
Growth of Si0.5Ge0.5 single crystals by the traveling liquidus-zone method and their structural characterizations(International Union of Materials Research Societies and International Conference in Asia (IUMRS-ICA2011))
|
72.
|
2011/09/01
|
AIC法を用いたß-FeSi2の作製及びその構造的、電気的特性評価(2011年秋季第72回応用物理学会学術講演会)
|
73.
|
2011/09/01
|
TaN薄膜の電気抵抗値に及ぼすフラッシュランプ熱処理の影響(2011年秋季第72回応用物理学会学術講演会)
|
74.
|
2011/09/01
|
TLZ法によるSi0.5Ge0.5単結晶作製とその結晶性の評価(Ⅱ)(2011年秋季第72回応用物理学会学術講演会)
|
75.
|
2011/08/26
|
Structural and electrical properties of β-FeSi2 bulk materials for thermoelectric applications(Asian School-Conference on Physics and technology of nanostructured Materials (ASCO-NANOMAT))
|
76.
|
2011/08/25
|
Structural and electrical properties of β-FeSi2 thin films prepared by RF magnetron sputtering(Asian School-Conference on Physics and technology of nanostructured Materials (ASCO-NANOMAT))
|
77.
|
2011/08/23
|
Development of microwave absorbing materials prepared from a polymer binder including Japanese lacquer and epoxy resin(Asian School-Conference on Physics and technology of nanostructured Materials (ASCO-NANOMAT))
|
78.
|
2011/03/28
|
鉄シリサイド研究への取り組み(第17回シリサイド系半導体研究会)
|
79.
|
2011/03/27
|
漆とエポキシ樹脂をバインダとした電波吸収材料の作成(2011年春季第58回応用物理学関係連合講演会)
|
80.
|
2011/03/25
|
β-FeSi2熱電変換材料の作製(2011年春季第58回応用物理学関係連合講演会)
|
81.
|
2011/03/24
|
反応性スパッタリング法で作製したTaN薄膜の熱処理依存性(2011年春季第58回応用物理学関係連合講演会)
|
82.
|
2010/12/18
|
The crystalline effect of the of the β-FeSi2 film using two types target prepared by pulsed laser deposition(The International Conference on Electrical and Computer Engineering (ICECE), Dec. 18-20, 2010, Dhaka, Bangladesh.)
|
83.
|
2010/09/16
|
(ZnO)1-x(GaN)x:Mn2+粉末の作製と光学的評価(2010年秋季第71回応用物理学会学術講演会)
|
84.
|
2010/09/16
|
ナノクリスタルGe分散溶液の発光特性(2010年秋季第71回応用物理学会学術講演会)
|
85.
|
2010/09/15
|
漆とエポキシ樹脂をバインダとした電波吸収材料の作製(2010年秋季第71回応用物理学会学術講演会)
|
86.
|
2010/09/14
|
反応性スパッタリング法で作製した窒化タンタル薄膜の諸性質(2010年秋季第71回応用物理学会学術講演会)
|
87.
|
2007/03
|
高圧水照射によるSi表面酸化とそのMOS特性(第54回応用物理学関係連合講演会,東京)
|
88.
|
2005/09
|
インピーダンス測定によるAlOXトンネル接合素子の評価(第66回応用物理学関係連合講演会,徳島)
|
89.
|
2004/09/15
|
Thermally Stable Magnetic Tunnel Junctions for High Density MRAM(2004 International Conference on Solid State Devices and Materials, Tokyo, Japan)
|
90.
|
2004/06
|
Pb-free bumping for high-performance SoCs(54th Electronic Components and Technology Conference, USA,IEEE)
|
91.
|
2001/03
|
下地絶縁膜の膜質がAl結晶配向性におよぼす影響(第48回応用物理学関係連合講演会,東京)
|
92.
|
1999/03
|
Ion Beam Synthesis法によるβ-FeSi2/Siの作製とその光物性評価(シンポジウム講演)(第46回応用物理学関係連合講演会,千葉)
|
93.
|
1999/03
|
ガスクラスターイオンビームを用いた新しい薄膜形成技術(シンポジウム講演)(第46回応用物理学関係連合講演会,千葉)
|
94.
|
1998/11/04
|
Optical Thin Film Formation by Gas-cluster Ion Beam Assisted Deposition(15th Int. Conf. on Application of Accelerators in Research and Industry, Denton, Texas, USA)
|
95.
|
1998/09
|
ガスクラスーイオンビーム援用蒸着法による光学薄膜の形成(II)(第59回応用物理学関係連合講演会,広島)
|
96.
|
1998/06/22
|
Formation of oxide thin films by O2-cluster ion beam assisted deposition(12th International Conference on Ion Implantation Technology, Kyoto, Japan)
|
97.
|
1998/06
|
Fullerene ion (C60+) implantation in GaAs(100) substrate(12th International Conference on Ion Implantation Technology, Kyoto, Japan, IEEE)
|
98.
|
1998/03
|
ガスクラスーイオンビーム援用蒸着法による光学薄膜の形成(第45回応用物理学関係連合講演会,東京)
|
99.
|
1997/03
|
Ion beam synthesis and characterization of metastable group-IV alloy semiconductors(The 7th International Symposium on Advanced Nuclear Energy Research, Takasaki, Japan)
|
100.
|
1997/03
|
Two- and three-step annealing effects of metallic and semiconducting iron silicides formed by ion beam synthesis(The 7th International Symposium on Advanced Nuclear Energy Research, Takasaki, Japan)
|
101.
|
1996/12
|
Growth of Ge1-xCx alloys on Si by combined low-energy ion beam deposition and molecular beam epitaxy method(Mater. Res. Soc. Symp.)
|
102.
|
1996/09
|
IBS法により作製したβ-FeSi2/Siからの1.54 mm PL発光と光吸収・Raman散乱特性(第57回応用物理学関係連合講演会,福岡)
|
103.
|
1996/05/23
|
Photoluminescence studies of epitaxial Si1-xGex and Si1-x-yGexCy layers on Si formed by ion beam synthesis(Joint International Symposium of the '96 MRS-J Conference and the 3rd Ion Engineering Conference, Makuhari, Japan)
|
104.
|
1996/03/26
|
Optical, electrical and structural properties of polycrystalline β-FeSi2 thin films fabricated by electron beam evaporation of ferrosilicon(The 15th International Conference on Thermoelectrics, Pasadena, USA)
|
105.
|
1996/03
|
Electrical properties of β-FeSi2 bulk crystal grown by horizontal gradient freeze method(The 15th International Conference on Thermoelectrics, Pasadena, USA, IEEE)
|
106.
|
1995/11
|
Growth of Si1-xSnx layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG)(Mater. Res. Soc. Symp.)
|
107.
|
1995/11
|
Structural properties of β-FeSi2 bulk crystal grown by horizontal gradient freeze method(Mater. Res. Soc. Symp.)
|
108.
|
1995/08
|
β-FeSi2/Siの光学・構造的特性に及ぼす基板面方位の影響(第56回応用物理学関係連合講演会,石川)
|
109.
|
1995/04
|
Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy(Mater. Res. Soc. Symp.)
|
110.
|
1995/04
|
Feイオン注入により作製したβ-FeSi2/Si の光学的・構造的特性(第42回応用物理学関係連合講演会,神奈川)
|
111.
|
1995/04
|
Ion-beam-induced epitaxy and solid phase epitaxy of SiGeC on Si formed by Ge and C ion implantation and their structural and optical properties(Mater. Res. Soc. Symp.)
|
112.
|
1995/02/05
|
Optical and structural properties of β-FeSi2 layers on Si fabricated by triple 56Fe ion implantations(9th International Conference on Ion Beam Modification of Materials,Canberra, Australia)
|
113.
|
1994/12
|
Optical and structural characterizations of β-FeSi2 synthesized by Fe ion implantation(第13回法政大学イオンビーム工学シンポジウム,東京)
|
114.
|
1994/04
|
イオン注入による欠陥準位を介したInP:Ybの選択励起発光スペクトル(第41回応用物理学関係連合講演会(講演予稿集 Pt 3, p.1173))
|
115.
|
1993/08/09
|
Optical activity and recrystallization of Yb+-MeV ion-implanted InP(International Conference on Luminescence, Connecticut, USA)
|
116.
|
1993/04
|
MeVイオン注入によるInP:Ybの励起・発光スペクトル(第40回応用物理学関係連合講演会(講演予稿集 Pt 3, p.1302))
|
117.
|
1993/04
|
Optical activity of Yb3+ in MeV ion-implanted InP(Mater. Res. Soc. Symp.)
|
5件表示
|
全件表示(117件)
|