1.
|
2009/01
|
論文
|
"Fault Effect of Open Faults Considering Adjacent Signal Lines in a 90 nm IC" Proceedings of "22nd International Conference on VLSI Design" (共著)
|
2.
|
2009/01
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論文
|
PAPER ID=93, "A Novel Approach for Improving the Quality of Open Fault Diagnosis" Proceedings of "22nd International Conference on VLSI Design" (共著)
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3.
|
2008/10
|
論文
|
"Study of Quantum Effects on Backscattering Phenomenon from Drain Region of Double Gate MOSFET" 2008 International Microprocesses and Nanotechnology Conference pp.29D-9-21, pp.186-187. (共著)
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4.
|
2008/09
|
論文
|
"Compact Model for DG MOSFETs and its Modular Structure Implemented in Verilog-A" Proceedings of "IEEE Workshop on Compact Modeling", pp.pp.73-78. (共著)
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5.
|
2008/09
|
論文
|
"Suppression of Effect of Backscattering from Drain Region on Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Characteristics" Japanese Journal of Applied Physics 47(6),pp.4980-4984 (共著)
|
6.
|
2008/07
|
論文
|
"Fault Analysis of Interconnect Opens in 90nm CMOS ICs with Device Simulator" Proceesings of "The 23rd International Technical Conference on Circuits/Systems, Computers and Communications" (ITC-CSCC2008) pp.249-252 (共著)
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7.
|
2008/06
|
論文
|
"Comparison of Four-terminal DG MOSFET Compact Model with Thin Si channel FinFET Devices" Technical Proceedings of the 2008 NSTI-Nanotech 208 3,pp.861-864 (共著)
|
8.
|
2008/05
|
論文
|
"Construction of a Compact Modeling Platform and Its Application to the Development of Multi-Gate MOSFET Models for Circuit Simulation" Technical Proceedings of the 2008 NSTI-Nanotech 208, 3,pp.764-769 (共著)
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9.
|
2008/03
|
論文
|
"Suppression of Intrinsic Delay Variation in FPGAs using Multiple Configurations" ACM Transactions on Reconfigurable Technology and Systems (TRETS), Volume 1, Issue 1, (March 2008), pp.3.1-3.31 (共著)
|
10.
|
2008/03
|
論文
|
「半導体デバイスの信頼性基礎講座(7)-スケーリングと信頼性ー」
|
11.
|
2008/01
|
論文
|
"Construction of a Compact Modeling Platform and Its Application to the Development of Multi-Gate MOSFET Moddels for Circuits Simulation" The Proceedings of The 5th International Workshop on Comact Modeling (IWCM 2008), pp.1-4. (共著)
|
12.
|
2008/01
|
論文
|
"Double-Gate MOSFET Compact Model ans its implementation in Verilog-A" The Proceedings of The 5th International Workshop on Comact Modeling (IWCM 2008), pp.17-23. (共著)
|
13.
|
2007/12
|
論文
|
"Optimization of the Body Bias Voltage Set (BBVS) for Flex Power FPGA" IEICE Transactions on Information and Systems, Vol.E90-D, No.12 December 2007, pp.1947-1955 (共著)
|
14.
|
2007/12
|
論文
|
"Power Configurable Block Array Connected in Series as First Prototype Flex Power FPGA Chip" ICFPT2007, International Conference on Field-Programmable Technology 2007, Poster P2-5, 1-4244-1472-5/07. (共著)
|
15.
|
2007/11
|
論文
|
"Pleliminary Study of Suppresson of Backscattering Phenomenon from Drain Region on Double Gate MOSFET's Characteristics" MNC2007, Microprocesses and Nanotechnology 2007, 2007 International Microprocesses and Nanotechnology Conference, 6A-4-31, pp.114-115. (共著)
|
16.
|
2007/10
|
論文
|
"Clues for Modeling and Diagnosing Open Faults with Considering Adjacent Lines" The Proceedings of ATS2007 (The 2007 IEEE 16th Asian Test Symposium), pp.39-44 (共著)
|
17.
|
2007/09
|
論文
|
"Backscattered Electrons from a Drain Region in a Silicon Decanano Diode" Japanese Journal of Applied Physics, Part 1, Vol. 46, No. 9B, 2007, pp. 6208-6212 (共著)
|
18.
|
2007/09
|
論文
|
"Test Generation and Diagnostic Test Generation for Open Faults with Considering Adjacent Lines" The Proceedings of DFT2007 (The 22nd IEEE International Symposiumon Defect and Fault Tolerance in VLSI Systems), pp.243-251 (共著)
|
19.
|
2007/07
|
論文
|
「最新SOIデバイス技術と信頼性」("The Latest SOI Device Technology and its Reliability") 日本信頼性学会誌 信頼性 Vol.29 , No.4, pp. 226-233 (Reliability Engineering Association of Japan, Vo.29, No.4, pp.226-233) (単著)
|
20.
|
2006/11
|
論文
|
「オープン故障に対する一故障モデルの提案とその故障診断 A proposal of a open fault model and its fault diagnosis」 LSIテスティングシンポジウム/2006 会議録 pp. 181-186, 第26回LSIテスティングシンポジウム 181-186頁
|
21.
|
2006/11
|
論文
|
「隣接配線を考慮したオープン故障の一診断法 A method of locating open faults with considering adjacent nets」 LSIテスティングシンポジウム/2006 会議録 pp. 187-192, 第26回LSIテスティングシンポジウム 187-192頁
|
22.
|
2006/10
|
論文
|
"Designing DG MOSFET's Compact Model" Proceesings of the 2006 China-Ireland International Conference on Information and Communications Technologies( CIICT06), pp. 258-261, p.447 pp.256-251, 447 (共著)
|
23.
|
2006/10
|
論文
|
"Evaluation of Backscattering Effect on Drain Current in a Silicon Decanano Diode" MNC2006, Microprocesses and Nanotechnology 2006, 2006 International Microprocesses and Nanotechnology Conference, 26C-7-22, pp.140-141. pp.140-141 (共著)
|
24.
|
2006/09
|
論文
|
"Analysis of Backscattering Phenomenon from Drain Region in Silicon Decanano Diode" Japanese Journal of Applied Physics, Part 1 45(9A),pp.6786-6789 (共著)
|
25.
|
2006/09
|
論文
|
「複数の回路構成情報を用いたチップ内ばらつきを有するFPGAの歩留まり向上手法の提案」(RECONF2006-25) 電子情報通信学会技術研究報告 RECONF2006-20〜26(リコンフィギャラブルシステム)
|
26.
|
2006/06
|
論文
|
「Flex Power FPGAの回路レベルからチップレベルまでの一貫したシミュレーション評価」"Consistent Simulation Evaluation of Flex Power FPGA from Circuit Level to Chip Level" 電子情報通信学会論文誌 D J89-D(6),1071-1081頁 (共著)
|
27.
|
2006/05
|
論文
|
「Flex Power FPGAにおける最適ボディバイアス電圧値組み合わせの詳細な分析」(RECONF2006-4) 電子情報通信学会技術研究報告 RECONF2006-1〜10(リコンフィギャラブルシステム) (共著)
|
28.
|
2006/04
|
論文
|
"Four-Terminal Doubel-Gate Logic for LSTP Applications below 32-nm Technology Node" ICICDT-2006 Proceedigs pp.92-95, ICICDT: International Conference on Integrated Circuits Design and Technology pp.92-95
|
29.
|
2006/02
|
論文
|
「SOI(Silicon On Insulator)デバイス技術と信頼性」
|
30.
|
2006/01
|
論文
|
"Compact Model for Four-Terminal DG MOSFET" Extended Abstracts of The 3rd International Workshop on Compact Modeling, IWCM'06, pp.15-21 pp.pp.15-21 (共著)
|
31.
|
2006/01
|
論文
|
「Flex Power FPGAにおけるしきい値制御用バイアス電圧値組合せの最適化について」 電子情報通信学会技術研究報告 VLD2005-97〜107(VLSI設計技術), pp. 97-107 会技術研究報告 VLD2005-97〜107(VLSI設計技術),頁 (共著)
|
32.
|
2005/12
|
論文
|
"Future Devices Expand FPGA into Another Dimension - a Flex Power FPGA case -" Extended Abstracts of International Symposium on Advanced Reconfigurable Systems, pp.20-31 pp.pp.20-31 (共著)
|
33.
|
2005/12
|
論文
|
"Overview of Flex Power VPR and it's Vth Assignment Algorithm" Extended Abstracts of International Symposium on Advanced Reconfigurable Systems, Non-Printed (共著)
|
34.
|
2005/10
|
論文
|
"Analysis of Backscattering Phenomenon from Drain Region in a Silicon Nanodiode" MNC2005, Microprocesses and Nanotechnology 2005, 2005 International Microprocesses and Nanotechnology Conference, 28B-10-2, pp.262-263. pp.pp.262-263 (共著)
|
35.
|
2005/09
|
論文
|
「Flex Power FPGAにおけるしきい値電圧制御粒度の評価」 電子情報通信学会技術研究報告 RECONF2005-41〜52(リンコンフィギャラブルシステム), RECONF2005-45, pp. 25-3 pp. 25-3頁 (共著)
|
36.
|
2005/09
|
論文
|
「Flex Power FPGAにおけるしきい値電圧最適化アルゴリズムの検討」 電子情報通信学会技術研究報告 RECONF2005-41〜52(リンコンフィギャラブルシステム), RECONF2005-46, pp. 31-36 pp. 31-36頁 (共著)
|
37.
|
2005/04
|
論文
|
"Compact Model for Ultra-Short Channel Four-Terminal DG MOSFETs for Exploring Circuit Characteristics" NANOTECH 2005 Volume 2, Technical Proceedings of the 2005 Nanotechnology Conferech and Trade show, pp. 183-186 2,pp.pp. 183-186 (共著)
|
38.
|
2005/04
|
論文
|
"Device Parameter Extraction from Fabricated Double-Gate MOSFETs" NANOTECH 2005 Volume 2, Technical Proceedings of the 2005 Nanotechnology Conferech and Trade show, pp. 187-190 2,pp.pp. 187-190 (共著)
|
39.
|
2005/03
|
論文
|
「システムレベル設計支援ツールMEISSUTの開発」 情報処理学会第67回全国大会 1,97-98頁
|
40.
|
2004/08
|
論文
|
"Preliminary Evaluation of Flex Power FPGA: A Power Reconfigurable Architecture with Fine Granularity" IEICE Transactions on Information and Systems E87-D(08),pp.pp.2004-2010 (共著)
|
41.
|
2004/06
|
論文
|
"4-Terminal FinFETs with High Threshold Voltage Controllability" Conference Digest of Device Research Conference pp.207-208 (共著)
|
42.
|
2004/04
|
論文
|
"Can A Cool Chip Be Hot? Yes, Flex Power FPGA Can." Cool Chips VII Proceedings 1,pp.77 (共著)
|
43.
|
2004/04
|
論文
|
"Can A Cool Chip Be Hot? Yes, Flex Power FPGA Can." Cool Chips VII Proceedings 1,pp.49-57 (共著)
|
44.
|
2004/03
|
論文
|
"Improved Compact Model for Four-Terminal DG MOSFETs" NANOTECH 2004 Volume 2,Technical Proceedings of the 2004 Nanotechnology Conferech and Trade show,Defense Advanced Research Projects Agency (DARPA) pp.159-16
|
45.
|
2004/03
|
論文
|
「しきい値電圧制御可能な4端子FinFETの作製電気特性 」 第51回応用物理学関係連合講演会 講演予稿集 応用物理学 No.2,30p-ZH-11.p.977頁 (共著)
|
46.
|
2004/02
|
論文
|
"Preliminary Performance Analysis of Flex Power FPGA a Power Reconfigurable Device with Fine Granularity" The Proceedings of FPGA2004:ACM/SIGDA Twelfth ACM International Symposium on Field-Programmable Gate ACM SIGDA pp.57 (共著)
|
47.
|
2004/01
|
論文
|
"XMOS Compact Modeing and its Important Role in Vertically Integrated Novel Device Reseach The Proceedings of ASP-DAC 2004(Asia and South Pacific Design Automation Conference 2004),IEEE Electron Devices Society pp.pp14-17 (共著)
|
48.
|
2004
|
論文
|
"Cross-Sectinal Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors" Japanese Journal of Applied Physics, Part 1 43(4B),pp.2151-2155 (共著)
|
49.
|
2003/12
|
論文
|
"Flexible threshold voltage FinFETs with independent double gates and an ideal rectangular cross-section Si-Fin channel 2003 IEEE IEDM(International Electron Devices Meeting),IEDM '03 Technical Digest,the IEEE Electron Devices Society pp.pp986-989 (共著)
|
50.
|
2003/12
|
論文
|
"Systematic Electrical Characteristics of Ideal Rectangular Cross Section Si-Fin Channel Double-Gate MOSFETs Fabricated by a Wet Process" IEEE Transactions on Nanotechnology,The IEEE Electron Devices Society Vol.2(No.4),pp.pp198-204 (共著)
|
51.
|
2003/09
|
論文
|
"An Experimental Study of The Cross-Sectional Channel Shape Dependence of Shot-Channe Effects in Fin-Type Double-Gate MOSFETs" Extended Abstracts of the 2003 International Coference on Solid State Dvices and Materials,The Japan Society of Applied Physics pp.pp284-285 (共著)
|
52.
|
2003/09
|
論文
|
「Flex Power VPR の概要」 第4回リコンフィギュラブルシステム研究会 論文集 196-203頁
|
53.
|
2003/08
|
論文
|
「13-nmの短形si-Finチャネル断面をもつダブルゲートMOSFET」 第64回応用物理学会学術講演会 講演予稿集 応用物理学会 No.2,1p-YD-11/11,p.798頁 (共著)
|
54.
|
2003/07
|
論文
|
"Ideal Rectangular Cross-Section Si-Fin Channel Doble-Gate MOSFETs Fabricated Using Orientation-Dependent Wet Etching" IEEE Electron Devices Lette,The IEEE Electron Devices Society Vol.24(No.7),pp.pp484-486 (共著)
|
55.
|
2003/06
|
論文
|
"Electrical Property of Ideal Rectangular Si-Fin Channel Double-Gate MOSFETs" Abstracts of 2003 Silicon Nanoelectronics Workshop,A Satellite Conference of the VLSI Symposium,The IEEE Electron Devices Society pp.pp64-65 (共著)
|
56.
|
2003/06
|
論文
|
Fin-Type Double-Gate Metal-Oxide and Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography Japanese Journal of Applied Physics,The IEEE Electron Devices Society Part1,Vol.42(No.6B),pp.pp4142-4146 (共著)
|
57.
|
2003/04
|
論文
|
"Multi-Fin Double-Gate MOSFET Fabricated by Using(110)-Oriented SOI Wafers and Orientation-Dependent Etching" The Proceedings of the 203rd Meeting of the Electrochemical Society,The Electrochemical Society pp.p876 (共著)
|
58.
|
2001/10
|
論文
|
Electrical and Geometrical Properties of a Quantum Nanowire Device Fabricated by an Inorganic EB Resist Process The Japan Society of Applied Physics, the IEEE Electron Devices SocietyDigest of Papers: 2001 International Microprocess and Nanotechnology Conference,Kunibiki Messe, Matsue-shi, Simane, Japan pp.70-71 (共著)
|
59.
|
2001/10
|
論文
|
電気学会 「超高速デバイスと関連技術」調査専門委員会 委員
|
60.
|
2001/04
|
論文
|
情報処理学会 システムLSI設計技術研究研究会 運営委員
|
61.
|
2001/03
|
論文
|
「デバイス特性によるSiナノ細線の評価と自己抑止酸化による細線幅の改善」(学会誌) 電気学会電気学会電子・情報・システム部門誌(論文誌)C 121巻3号,515-523頁 (共著)
|
62.
|
2000/11
|
論文
|
'Evaluation of Si Nanowires by Device Characteristics and Improvement in Unniformity of Si Nanowire Width Using Self-Iimiting Oxidation'(国際学会議事録) Research and Development Association for Future Electron Devices(FED)Extended Abstracts of 4th International Workshop on Quantum Functional Devices, pp.97-98 (共著)
|
63.
|
2000/11
|
論文
|
'Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process'(学会誌) The American Vacuum Society, the American institute of PhysicsJournal of Vacuum Science & Technology B Vol.18 №6,pp.2640-2645 (共著)
|
64.
|
2000/11
|
論文
|
'Properties of Si nanowire devices fabricated by using an inorganic EB resist process'(学術雑誌) Academic PressSuperlattices and Microstructures Vol.28 №5/6,pp.453-460 (共著)
|
65.
|
2000/11
|
論文
|
'Spectroscopic Ellipsometry Studies on Ultrathin hydrogenated Amorphous Silicon Films Prepared by Themal Chemical Vapor Deposition'(学会誌) The American Vacuum Society, the American Institute of PhysicsJapanese Journal of Applied Physics Part1, Vol.39 №11,pp.6196-6201 (共著)
|
66.
|
2000/10
|
論文
|
'Development of Silicon Nanowire Devices'
|
67.
|
2000/09
|
論文
|
「弾性本棒における縦振動のレーザー光による視覚化」(学会誌) 日本物理教育学会物理教育学会誌 第48巻 第4号,310-314頁 (共著)
|
68.
|
2000/07
|
論文
|
'Fabrication Technology of Si Nanodot Nanowire Memory Transistors Using an Inorganic EB Resist Process'(国際学会議事録) The Japan Society of Applied Physics, the IEEE Electron Devices SocietyDigest of Papers: 2000 International Microprocess and Nanotechnology Conference pp.182-183 (共著)
|
69.
|
2000/07
|
論文
|
'Single electron memory characteristic of silicon nanodot nanowire transistor'(学会誌) The Institution of Electronics EngineersThe IEE Electronics Letters Vol.36 №15,pp.1322-1323 (共著)
|
70.
|
2000/06
|
論文
|
'Fabrication of Si Nanodot Nanowire Memory Transistors and their Properties'(国際学会議事録) The IEEE Electron Devices Society, the Japan Society of Aplied PhysicsAbstracts of 2000 Silicon Nanoelectronics Workshop, A Satellite Conference of the VLSI Symposium pp.77-78 (共著)
|
71.
|
1999/12
|
論文
|
第3回「量子効果等の物理現象」シンポジウム予稿集(東京)
|
72.
|
1999/10
|
論文
|
第18回新機能素子「シンポジウム予稿集(東京)
|
73.
|
1999/09
|
論文
|
Plane-view observation technique of silicon nanowires by transmission electron American Vacuum SocietyJournal of Vacuum Science & Technology B Vol.17, No.5,pp.1897-1902 (共著)
|
74.
|
1999/06
|
論文
|
An Experimental 40-nm Gate Length 4-nm-Thick SOI n-MOSFET(国際会議) The Japan Society of Applied Physics and The JapanThe IEEE Electron Device Society1999 Silicon Nanoelectronics Workshop Abstracts, Kyoto pp.72-73 (共著)
|
75.
|
1999/06
|
論文
|
High Suppression of the Short-Channel Effect in Ultrathin SOI n-MOSFETs(国際会議) The IEEE Electron Device SocietyProceedings of the 57th Annual Device Reseach Conference, UCSB pp.32-33 (共著)
|
76.
|
1999/05
|
論文
|
Highly Suppressed Threshold Voltage Roll-off Characteristics of the 4 nm-Thick SOI n-MOSFETs in the 40-135 nm Gate Length Regime(国際会議) The Electrochemical SocietyProceedings of the 9th International Symposium on SOI Technology and Devices, Seatle pp.260-265 (共著)
|
77.
|
1999/04
|
論文
|
Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs using Epitaxial Layer Transfer SOI Wafers The Japan Society of Applied Physics,Japanese Journal of Applied Physics Vol.38 Part1 No.4B,pp.2492-2495 (共著)
|
78.
|
1999/02
|
論文
|
Highly Suppressed Short-Channel Effects in Ultrathin SOI n-MOSFETs The IEEE Electron Devices SocietyIEEE transactions iof Electron Devices Vol.47 No.2,pp.354-359 (共著)
|
79.
|
1999/01
|
論文
|
Fabrication Technology of Ultrafine SiO2 masks and Si nanowires using oxidation of vertical sidewalls of a Poly-Si layer Journal of Vacuum Science & Technology B Vol.17, No.1,pp.77-81 (共著)
|
80.
|
1998/09
|
論文
|
Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs using ELTRAN SOIWafers(国際会議) Extended Abstracts of International Conference on Solid State Devices and Materials, Hiroshima pp.320-321 (共著)
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