Faculty Database - Ogura Atusi

Books and Papers

Conference Presentations

Academic Qualifications

researchmap Researcher Code

（Last updated : 2023-08-09 22:31:29）

Ogura Atusi
Department Undergraduate School , School of Science and Technology

Position Professor

■ Books and Papers

1.	2012/08	Book	Advanced Aspects of Spectroscopy (Collaboration)
2.	2004	Book	SIMOX (Collaboration)
3.	1998	Book	Stress at the interface in SOI structure no. (Collaboration)

■ Conference Presentations

1.	2006/11	Evaluation of Polycrystalline Silicon for Solar Cells by Small p-n Diode Array
2.	2006/11	Evaluation of polycrystalline silicon for solar-cells by small p-n diode array
3.	2006/11	SiO2/Si Interfacial Lattice Strain Revealed by Extremely Asymmetric X-ray Diffraction
4.	2006/11	X-ray photoelectron spectroscopy study on SiO_2_ formed on several orientated c-Si in high pressure water vapo
5.	2006/10	Evaluation of SOI substrates with local or global strain by means of in-plane XRD measurement
6.	2006/10	W-CVD using biscyclopentadienyltungsten system
7.	2006/09	Analysis of Multicrystalline Silicon Wafers for Solar Cells by Photoluminescence Mapping and Spectroscopy
8.	2006/09	Evaluation of crystal quality of multicrystalline silicon for solar cells by p-n diode array
9.	2006/09	Evaluation of strain at Si_3_N_4_/Si interface by In-plane X-ray deffraction and UV-Raman spectroscopy
10.	2006/09	Evaluation of strained-Si substrates by means of UV-Raman spectroscopy
11.	2006/09	Measurement of strain at HfsiO(N)/Si interface by UV Raman Spectroscopy
12.	2006/09	Photoluminescence characterization of defects in multi-crystalline silicon wafers
13.	2006/09	Properties of chemical reaction during Ni and Ni-silicide deposition using Ni(PF_3_)_4_ and Si_3_H_8
14.	2006/09	Properties of Ni and Ni-silicide deposition using Ni(PF_3_)_4_ and Si_3_H_8_
15.	2006/09	Relative oxidation rates of various oriented silicon substrates in high-pressusre water vapor
16.	2006/09	W-CVD using (i-PrCp)_2_WH_2_
17.	2006/09	W-CVD using biscyclopentadienyltungsten system
18.	2006/08	Strain engineering and evaluation in advanced LSI technology
19.	2006/07	Chemical Vapor Deposition of NiSi using Ni(PF_3_)_4_ and Si_3_H_8_
20.	2006/05	Discussion on Issues Toward 450mm Wafer
21.	2006/03	Measurement of in-plane and depth profiles of strain in strained-Si substrates
22.	2005/11	Ni-silicide precursor for gate electrode
23.	2005/10	Chemical Vapor Deposition of Ni-silicide for gate electrode
24.	2005/10	Relaxation of Strained-SOI substrates by RTA process
25.	2005/09	Composition control of Ni-silicide by CVD using Ni(PF_3_)_4_ and Si_3_H_8_
26.	2005/09	UV-Raman Spectroscopy System for Local and Global Strain Measurement in Si
27.	2005/08	Estimation of Lattice Structure of Strained-Si Wafers Using Highly Parallel X-Ray Microbeam(Ⅰ)
28.	2005/08	Estimation of Lattice Structure of Strained-Si Wafers Using Highly Parallel X-Ray Microbeam(Ⅱ)
29.	2005/07	Crystallinity Estimation of Strained-Si Wafers by Using Highly Parallel X-Ray Microbeam
30.	2005/05	Evaluation of commercial SGOI and SSOI wafers comparing with epitaxially grown strained-Si by means of laser confocal inspection system
31.	2005/05	Nickel thin film deposition using Ni(PF_3_)_4_ for LSI electrode
32.	2004/10	Ni thin films deposition using tetrakistrifluorophosphinenickel (0), Ni(PF3)4
33.	2004/09	Depth Profiling of Si/Si1-xGex Structures by Micro-Raman Imaging
34.	2004/09	Depth Profiling of Si/Si1-xGex Structures by Micro-Raman Imaging
35.	2004/07	Crystalinity Estimate of Commercially Available Strained-Si Wafers using Synchrotron Highly Parallel X-ray Microbeam
36.	2004/06	Surface reaction in Ni MOCVD using cyclopentadienylallylnikel as a precursors Properties of CVD precursors for Ni
37.	2004/05	Properties of CVD precursors for Ni
38.	2003/12	Sub-10-nm Planar-Bulk-CMOS Devices using Lateral Junction Control
39.	2003/11	SOI-current status and trend in the future
40.	2003/10	Precursors for NiSi MOCVD
41.	2003/09	Body Contact structure using Eleveted Field Insulator for Ultra-Thin Film SOI-MOSFET
42.	2003/09	Comparison of SOI Wafer Mappings between Photoluminescence Intensity and Photoconductive Decay Lifetime
43.	2003/09	NiSi MOCVD for FinFET and UTB-SOI
44.	2003/09	Nonuniformity of SOI Wafers Manifested by Photoluminescence and Lifetime Mapping
45.	2003/09	Precursors for chemical vapor deposition of NiSi
46.	2003/04	Evaluation of commercial Ultra-thin SOI Substrates using Confocal Laser Inspection System
47.	2003	Vacancy-type defects in SOI wafwrs probed by monoenergetic positron beam
48.	2002/12	SOI Formation by Light ION Implantation and Annealing in Oxigen Including Atmoshere
49.	2002/11	Characterization of silicon-on-insulator wafers by monoenergetic positron beams
50.	2002/11	Partial SOI/SON Formation by He^+^ Implantation and Annealing
51.	2002/10	Organometallic Hf and Si precursors for Hf_1-x_Si_x_O_2_ thin film formation formation
52.	2002/09	Evaluation of SOI substrates by positron annihilation
53.	2002/09	Reduction of Pattern Edge Defects in Partial SOI by LII (Light Ion Implantation) Technique
54.	2002/09	Reduction of Pattern Edge Defects in Partial SOI by LII (Light IonImplantation) Technique
55.	2002/08	Organometallic Hf and Si precursors for Hf_1-x_Si_x_O_2_ thin film formation characterization
56.	2002/08	Organometallic Hf and Si precursors for Hf_1-x_Si_x_O_2_ thin film formation sythesis
57.	2001/10	"HfO_2_ and Hf_1-x_Si_x_O_2_ deposition by MOCVD using TDEAH
58.	2001/10	BOX Layer Formation by Oxygen Precipitation at Implantation Damage of Light Ions
59.	2001/09	Novel SOI fabrication process by light ion implantation and annealing in oxigen including atmosphere
60.	2001/09	Oxygen-Related Defects and Their Annealing Behavior in Low-Dose Seperation-by-Implanted Oxigen (SIMOX) Wafers Studied by Slow Positron Beams
61.	2001/07	Formation of Epitaxially Ordered SiO_2_ in Oxygen-implanted Silicon During Thermal Annealin
62.	2001/07	MOCVD precursors for Ta and Hf compound films
63.	2001/04	Characterization of Optical Lifetime in Silicom-on-insulator wafers by Photoluminescence Decay Method
64.	2001/04	HfO_2_ Film Formation by Metalorganic Chemical Vapor Deposition
65.	2001/03	Gas Phase Chemical Reaction in Tantalum Nitride Low-pressure Chemical Vapor Deposition
66.	2000/11	Control of buried oxide formation in low-dose SIMOX process
67.	2000/10	LPCVD of TaCN thin film for barrier layer in Cu interconnection
68.	2000/10	Photoluminescence Analysis of Anealing Process in Low-Dose SIMOX Wafers
69.	2000/08	Evaluation of SOI substrates by positron annihilation
70.	1999/10	Evaluation of buried oxide formation in low-dose SIMOX process
71.	1999/05	Novel SIMOX with BOX at Damage Peak
72.	1998/10	Defect Characterization in UNIBOND Wafers by Pholumine scemce Spectroscopy and Transmission Electron Microscopy
73.	1998/09	Oxigen Precipitates amd Related Defects in SOI Substrate Fabricated by Wafer Bonding and H^+^ Splitting
74.	1997/09	Preciese Measurement of Strain in SOI Induced by Local Oxidation
75.	1996/08	Thinning of SOI Bonded Wafers by Applying Voltageduring KOH
76.	1996/04	Evaluation of the Depth Profile of Defects in SIMOX
77.	1995/10	Highly Uniform SOI Fabrication by Appling Voltage during KOH Etching of Bonded Wafers
78.	1995/09	Study on Size Zelected,Matrix Isolated Siclusters
79.	1994/03	Raman spectroscopy of matrix-isolated monodisperse Si Clusters
80.	1993/11	Raman spectroscopy of size selected, matrix isolated Si clusters
81.	1993	Raman spectroscopy of Si cluster
82.	1991/10	An Investigation on the Cutoff Characteristics of sub-quater-micron SOI MOSEET
83.	1990/06	Novel Technique for Si Epitaxial Lateral Overgroth:Tunnel Epitaxy
84.	1990/05	Imporovement of SiO_2_/Si Interface Flatnesws by Post Oxidation Anneal
85.	1989/10	Novel Technique for Si Epitaxial Lateral Overgroth:Tunnel Epitaxy
86.	1989/09	Si/SiO_2_ interface Structure in SOI and Thermally Oxidized S
87.	1988/11	Interface Structures in Lateral Seeding Epitaxial Si on SiO_2_
88.	1988/05	High-speed VTR Observation of SOI Laser Annealing
89.	1987/08	Gas Source Si□MBE Using SiH_4_
90.	1986/08	Atomic Layer Epitaxy of Uniform GaAs on 3-inch Substrate in Low Pressure MOCVD System
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■ Academic Qualifications

1.	～1991/03	〔Doctorial Course〕, Graduate School, Division of Science and Engineering, Waseda University,
2.	1991/03 Degree Acquisition	Waseda University,
3.	～1984/03	〔Master Course〕, Graduate School, Division of Science and Engineering, Waseda University, Completed,
4.	～1982/03	Faculty of Science and Engineering, Waseda University, Graduated,

■ researchmap Researcher Code

6000003067